GeBr4

Germanium tetrabromide · Germanium(IV) bromide

Germanium tetrabromide is a stable, insulating halide compound primarily used as a chemical precursor in the production of semiconductor materials.

BrGe
Crystal structure of GeBr4 (cubic, Pa-3 (No. 205))
Ground-state structure · Materials Project
Overview

About Germanium tetrabromide

Germanium tetrabromide is a thermodynamically stable inorganic halide that exists as a wide-gap insulator. Its chemical behavior is defined by its ability to serve as a volatile source of germanium in specialized synthesis environments, making it a critical component for high-purity material fabrication. The compound is frequently utilized in chemical vapor deposition processes where precise control over germanium deposition is required. Its structural stability and electronic properties allow it to function effectively in the growth of advanced thin-film semiconductors and related electronic components.

At a glance

Key Properties

Cross-validated computational properties for Germanium tetrabromide, aggregated across 4 databases.

Band Gap

2.93–3.00 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

25
4 databases, 9 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for GeBr4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pa-3 (No. 205)cubic3.000.0000-3.2963.60
P21/c (No. 14)monoclinic2.930.0010-3.2953.50
P1 (No. 1)Triclinic7.08
P21/c (No. 14)
P21/c (No. 14)Monoclinic3.06
P21/c (No. 14)Monoclinic2.94
P1 (No. 1)Triclinic4.50
P1 (No. 1)Triclinic4.30
P1 (No. 1)Triclinic5.33
C2/m (No. 12)Monoclinic4.75
C2/m (No. 12)Monoclinic4.18
P1 (No. 1)Triclinic4.88
Uses

Applications

Where Germanium tetrabromide is used.

Chemical vapor depositionSemiconductor manufacturingSynthesis of germanium-containing thin films
Reference

Frequently Asked Questions

Common questions about Germanium tetrabromide, answered from cross-validated data.

What is GeBr4?

Germanium tetrabromide is a stable, insulating halide compound primarily used as a chemical precursor in the production of semiconductor materials.

More questions
What is GeBr4 used for?
Germanium tetrabromide (GeBr4) is used in chemical vapor deposition, semiconductor manufacturing, and synthesis of germanium-containing thin films.
What is the band gap of GeBr4?
Germanium tetrabromide (GeBr4) has a DFT-computed band gap of 2.93–3.00 eV across 25 reported structures.
Is GeBr4 a metal, semiconductor, or insulator?
With a wide band gap up to 3.00 eV it is an insulator / wide-band-gap material.
Is GeBr4 thermodynamically stable?
Yes — Germanium tetrabromide (GeBr4) sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of GeBr4?
The lowest-energy reported polymorph of Germanium tetrabromide (GeBr4) is cubic symmetry, space group Pa-3 (No. 205).
What is the density of GeBr4?
The computed density of the ground-state structure of Germanium tetrabromide (GeBr4) is 3.60 g/cm³.
How many polymorphs of GeBr4 are known?
25 structures of GeBr4 are reported across 4 databases, spanning 9 distinct space groups.
What elements does GeBr4 contain?
Germanium tetrabromide (GeBr4) contains Br and Ge (2 elements).
Where does the data for GeBr4 come from?
GeBr4 data is cross-referenced from materials_project, mpaloe, jarvis, cod.
Comparison

How It Compares

As a primary germanium halide, this compound serves as a fundamental building block in inorganic synthesis, providing a stable and reliable pathway for introducing germanium into complex material systems where insulating properties are required.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • mpaloe — Data from mpaloe.
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).

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