GeBi2O5

GeBi2O5 is a semiconducting bismuth germanate oxide that is considered a promising candidate for synthesis due to its favorable thermodynamic stability.

BiGeO
Crystal structure of GeBi2O5
Ground-state structure · Materials Project
Overview

About GeBi2O5

GeBi2O5 is a complex bismuth germanate oxide that exhibits semiconducting electronic properties. Its position near the thermodynamic hull suggests that it is a viable candidate for experimental synthesis and further characterization in materials science research. The compound is notable for its structural complexity, with multiple reported configurations across various databases, highlighting its potential for diverse atomic arrangements. This versatility makes it an intriguing subject for investigating structure-property relationships in oxide semiconductors. As a material with significant structural data available, it serves as a valuable entry point for researchers exploring the intersection of bismuth-based chemistry and germanium-oxide frameworks. Its potential applications are primarily centered on its semiconducting nature, which allows for exploration in electronic and optoelectronic device development.

At a glance

Key Properties

Cross-validated computational properties for GeBi2O5, aggregated across 3 databases.

Band Gap

2.32–2.38 eV
Range across DFT structures

Energy Above Hull

0.006 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

11
3 databases, 2 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting GeBi2O5.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Uses

Applications

Where GeBi2O5 is used.

Semiconductor researchOptoelectronic material developmentSolid-state oxide chemistry
Reference

Frequently Asked Questions

Common questions about GeBi2O5, answered from cross-validated data.

What is GeBi2O5?

GeBi2O5 is a semiconducting bismuth germanate oxide that is considered a promising candidate for synthesis due to its favorable thermodynamic stability.

More questions
What is GeBi2O5 used for?
GeBi2O5 is used in semiconductor research, optoelectronic material development, and solid-state oxide chemistry.
What is the band gap of GeBi2O5?
GeBi2O5 has a DFT-computed band gap of 2.32–2.38 eV across 11 reported structures.
Is GeBi2O5 a metal, semiconductor, or insulator?
With a band gap up to 2.38 eV it is a semiconductor.
Is GeBi2O5 thermodynamically stable?
GeBi2O5 has a lowest energy above hull of 0.006 eV/atom (near hull (likely stable)).
How many polymorphs of GeBi2O5 are known?
11 structures of GeBi2O5 are reported across 3 databases, spanning 2 distinct space groups.
How is GeBi2O5 synthesized?
Literature-reported routes for GeBi2O5 include solid state (4 procedures documented).
What elements does GeBi2O5 contain?
GeBi2O5 contains Bi, Ge, and O (3 elements).
Where does the data for GeBi2O5 come from?
GeBi2O5 data is cross-referenced from latticegraph.
Comparison

How It Compares

As a relatively unique bismuth germanate, GeBi2O5 occupies a distinct niche within oxide materials. While it lacks direct structural siblings in this specific dataset, its status as a near-hull stable semiconducting oxide positions it as a promising subject for comparative studies against more common bismuth-based photocatalysts or germanium-based dielectric materials.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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