GeAsSe

GeAsSe is a thermodynamically stable semiconducting compound composed of germanium, arsenic, and selenium.

AsGeSe
Crystal structure of GeAsSe (orthorhombic, Pnna (No. 52))
Ground-state structure · Materials Project
Overview

About GeAsSe

GeAsSe is a complex ternary compound that occupies a stable position on the convex hull, indicating significant thermodynamic robustness. As a semiconducting material, it offers unique electronic characteristics that arise from the interplay of its constituent elements. Its structural diversity, evidenced by multiple reported configurations, makes it a subject of interest for fundamental materials research. The compound is primarily studied for its potential utility in specialized electronic and optoelectronic applications where stable, tunable semiconductor properties are required. Its ability to maintain structural integrity across various conditions highlights its importance in the broader landscape of chalcogenide-based materials.

At a glance

Key Properties

Cross-validated computational properties for GeAsSe, aggregated across 3 databases.

Band Gap

1.32–1.56 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

7
3 databases, 3 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of GeAsSe. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.83 / 1.00
Trust tier: high

Hull Spread

0.043 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for GeAsSe, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——1.560.0000-0.179—
Pnna (No. 52)orthorhombic1.480.0000-4.5914.65
Pnna (No. 52)orthorhombic1.320.0432-0.153—
——0.000.1446-0.034—
P4mm (No. 99)tetragonal0.000.96420.768—
P21/m (No. 11)monoclinic———5.20
Pnna (No. 52)orthorhombic———5.03
P21/m (No. 11)monoclinic———3.85
P21/m (No. 11)monoclinic———7.42
Uses

Applications

Where GeAsSe is used.

Semiconductor researchOptoelectronic device developmentMaterials science studies
Reference

Frequently Asked Questions

Common questions about GeAsSe, answered from cross-validated data.

What is GeAsSe?

GeAsSe is a thermodynamically stable semiconducting compound composed of germanium, arsenic, and selenium.

More questions
What is GeAsSe used for?
GeAsSe is used in semiconductor research, optoelectronic device development, and materials science studies.
What is the band gap of GeAsSe?
GeAsSe has a DFT-computed band gap of 1.32–1.56 eV across 7 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is GeAsSe a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.56 eV (a semiconductor). Measured gaps are typically larger.
Is GeAsSe thermodynamically stable?
Yes — GeAsSe sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of GeAsSe?
The reference structure of GeAsSe is orthorhombic symmetry, space group Pnna (No. 52).
What is the density of GeAsSe?
The computed density of the ground-state structure of GeAsSe is 4.65 g/cm³.
How many polymorphs of GeAsSe are known?
7 structures of GeAsSe are reported across 3 databases, spanning 3 distinct space groups.
What elements does GeAsSe contain?
GeAsSe contains As, Ge, and Se (3 elements).
Where does the data for GeAsSe come from?
GeAsSe data is cross-referenced from oqmd, materials_project, jarvis, mpaloe, cod.
Comparison

How It Compares

As a unique ternary phase, GeAsSe serves as a distinct example of stable semiconductor design within its chemical family, providing a baseline for understanding how the integration of germanium, arsenic, and selenium influences electronic behavior.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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