GeAs
Germanium monoarsenide · Germanium arsenide
Germanium monoarsenide is a semiconductor material composed of germanium and arsenic. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its unique structural and physical properties.
Key Properties
Cross-validated computational properties for Germanium monoarsenide, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for GeAs, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 0.51 | 0.0000 | -14.350 | 4.96 |
| I4mm (No. 107) | tetragonal | 0.00 | 0.1054 | -14.245 | 5.80 |
| C2/m (No. 12) | Monoclinic | — | — | — | 3.90 |
| P-1 (No. 2) | Triclinic | — | — | — | 4.57 |
| C2/m (No. 12) | Monoclinic | — | — | — | 6.88 |
| P-1 (No. 2) | Triclinic | — | — | — | 3.25 |
| P-1 (No. 2) | Triclinic | — | — | — | 4.72 |
| Pm (No. 6) | Monoclinic | — | — | — | 6.45 |
| Cm (No. 8) | Monoclinic | — | — | — | 2.91 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.39 |
| C2/m (No. 12) | Monoclinic | — | — | — | 8.64 |
| P-1 (No. 2) | Triclinic | — | — | — | 3.79 |
Applications
Where Germanium monoarsenide is used.
Frequently Asked Questions
Common questions about Germanium monoarsenide, answered from cross-validated data.
What is GeAs?
Germanium monoarsenide is a semiconductor material composed of germanium and arsenic. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its unique structural and physical properties.
What is GeAs used for?
What is the band gap of GeAs?
Is GeAs a metal, semiconductor, or insulator?
Is GeAs thermodynamically stable?
What is the crystal structure of GeAs?
What is the density of GeAs?
How many polymorphs of GeAs are known?
What elements does GeAs contain?
Where does the data for GeAs come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
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