GeAs
GeAs is a stable semiconducting material formed from germanium and arsenic that is widely documented in structural databases.
About GeAs
GeAs is a semiconducting binary compound composed of germanium and arsenic. As a thermodynamically stable phase located on the convex hull, it represents a robust structural configuration that has attracted significant interest in materials science research.
With extensive documentation across multiple databases, this material serves as a key subject for understanding the interplay between group 14 and group 15 elements. Its electronic character makes it a candidate for specialized semiconductor applications where stability and specific structural arrangements are required.
Key Properties
Cross-validated computational properties for GeAs, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of GeAs. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for GeAs, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 0.51 | 0.0000 | -14.350 | 4.96 |
| — | — | 0.33 | 0.0000 | -0.043 | — |
| C2/m (No. 12) | monoclinic | 0.22 | 0.0000 | -0.050 | — |
| — | — | 0.00 | 0.0955 | 0.053 | — |
| I4mm (No. 107) | tetragonal | 0.00 | 0.1054 | -14.245 | 5.80 |
| I4mm (No. 107) | tetragonal | 0.00 | 0.1089 | 0.059 | — |
| — | — | 0.00 | 0.1404 | 0.097 | — |
| — | — | 0.00 | 0.2272 | 0.184 | — |
| — | — | 0.00 | 0.2588 | 0.216 | — |
| — | — | 0.00 | 0.3152 | 0.272 | — |
| — | — | 0.00 | 0.3958 | 0.353 | — |
| — | — | 0.00 | 0.4172 | 0.374 | — |
Applications
Where GeAs is used.
Frequently Asked Questions
Common questions about GeAs, answered from cross-validated data.
What is GeAs?
GeAs is a stable semiconducting material formed from germanium and arsenic that is widely documented in structural databases.
What is GeAs used for?
What is the band gap of GeAs?
Is GeAs a metal, semiconductor, or insulator?
Is GeAs thermodynamically stable?
What is the crystal structure of GeAs?
What is the density of GeAs?
How many polymorphs of GeAs are known?
What elements does GeAs contain?
Where does the data for GeAs come from?
How It Compares
As a standalone material in this context, GeAs serves as a primary reference point for studying the binary interactions between germanium and arsenic. It occupies a unique position in the landscape of semiconducting compounds, providing a stable baseline for future research into similar pnictide-based material systems.
Data sources & attribution
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
Analyze GeAs in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 85 source databases.
Explore the Platform →