Ge4S12Sn4
Ge4S12Sn4 is a stable, semiconducting quaternary chalcogenide composed of germanium, sulfur, and tin.
About Ge4S12Sn4
Ge4S12Sn4 is a complex chalcogenide compound composed of germanium, sulfur, and tin. As a thermodynamically stable material situated on the convex hull, it represents a robust structural arrangement within its chemical system. Its electronic character as a semiconductor makes it an intriguing candidate for specialized electronic and optoelectronic research.
Because of its distinct elemental composition, this material is primarily studied for its structural stability and potential for electronic tuning. It serves as a valuable subject for researchers investigating the interplay between heavy metal cations and sulfur-based frameworks in solid-state chemistry.
Key Properties
Cross-validated computational properties for Ge4S12Sn4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge4S12Sn4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 1.66 | 0.0000 | -4.894 | 3.59 |
| P21/c (No. 14) | — | — | — | — | — |
| No. 0 | unknown | — | — | — | 0.98 |
| P21/c (No. 14) | — | — | — | — | — |
Applications
Where Ge4S12Sn4 is used.
Frequently Asked Questions
Common questions about Ge4S12Sn4, answered from cross-validated data.
What is Ge4S12Sn4?
Ge4S12Sn4 is a stable, semiconducting quaternary chalcogenide composed of germanium, sulfur, and tin.
What is Ge4S12Sn4 used for?
What is the band gap of Ge4S12Sn4?
Is Ge4S12Sn4 a metal, semiconductor, or insulator?
Is Ge4S12Sn4 thermodynamically stable?
What is the crystal structure of Ge4S12Sn4?
What is the density of Ge4S12Sn4?
How many polymorphs of Ge4S12Sn4 are known?
What elements does Ge4S12Sn4 contain?
Where does the data for Ge4S12Sn4 come from?
How It Compares
As a unique quaternary chalcogenide, Ge4S12Sn4 occupies a specialized niche in materials science. While many similar compounds are often explored for their phase-change or photovoltaic capabilities, this specific stoichiometry is noted for its thermodynamic stability, distinguishing it as a reliable structural reference point for future synthetic efforts in the germanium-tin-sulfur system.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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