Ge4Mg4P8
Ge4Mg4P8 is a semiconducting ternary phosphide compound that is considered a promising candidate for experimental synthesis.
About Ge4Mg4P8
Ge4Mg4P8 is a complex ternary phosphide featuring germanium, magnesium, and phosphorus. Its electronic character identifies it as a semiconductor, positioning it as a potential candidate for specialized electronic and optoelectronic applications where specific band structures are required. The material is characterized as near-hull, suggesting that it sits close to the thermodynamic ground state. This stability profile indicates that it is a viable target for experimental synthesis and further investigation in solid-state chemistry.
Key Properties
Cross-validated computational properties for Ge4Mg4P8, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge4Mg4P8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-42d (No. 122) | tetragonal | 1.50 | 0.0135 | -4.569 | 2.99 |
| P-4m2 (No. 115) | tetragonal | 0.00 | 0.0783 | -4.504 | 3.01 |
| Pna21 (No. 33) | — | — | — | — | — |
| — | — | — | — | — | 3.29 |
| — | — | — | — | — | 2.90 |
Applications
Where Ge4Mg4P8 is used.
Frequently Asked Questions
Common questions about Ge4Mg4P8, answered from cross-validated data.
What is Ge4Mg4P8?
Ge4Mg4P8 is a semiconducting ternary phosphide compound that is considered a promising candidate for experimental synthesis.
What is Ge4Mg4P8 used for?
What is the band gap of Ge4Mg4P8?
Is Ge4Mg4P8 a metal, semiconductor, or insulator?
Is Ge4Mg4P8 thermodynamically stable?
What is the crystal structure of Ge4Mg4P8?
What is the density of Ge4Mg4P8?
How many polymorphs of Ge4Mg4P8 are known?
What elements does Ge4Mg4P8 contain?
Where does the data for Ge4Mg4P8 come from?
How It Compares
As a unique ternary phosphide, Ge4Mg4P8 represents a specialized structural arrangement within the broader landscape of semiconducting pnictides. While many binary phosphides are well-characterized, this complex compound offers a distinct stoichiometry that may provide tunable electronic properties not easily accessed in simpler systems.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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