Ge3Bi2O9

Ge3Bi2O9 is a metastable semiconducting oxide containing germanium, bismuth, and oxygen that is currently the subject of structural and electronic research.

BiGeO
Crystal structure of Ge3Bi2O9 (hexagonal, P63/m (No. 176))
Ground-state structure · Materials Project
Overview

About Ge3Bi2O9

Ge3Bi2O9 is a complex oxide composed of germanium, bismuth, and oxygen. As a semiconducting material, it represents an intriguing subject for solid-state chemistry due to its electronic properties and the specific coordination environments formed by its constituent elements. Its nature as a metastable phase suggests that its synthesis and structural integrity are highly sensitive to processing conditions, making it a focal point for researchers studying phase stability in ternary oxide systems. The existence of multiple reported structures highlights the structural diversity and potential for polymorphism within this chemical composition. Understanding these configurations is essential for evaluating its viability in specialized electronic or optical applications where specific structural motifs are required to achieve desired performance characteristics.

At a glance

Key Properties

Cross-validated computational properties for Ge3Bi2O9, aggregated across 3 databases.

Band Gap

2.93–3.04 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.006 eV/atom
Best (lowest) across sources

Stability

Near Hull
3 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ge3Bi2O9. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.84 / 1.00
Trust tier: high

Hull Spread

0.040 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ge3Bi2O9, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——3.040.0062-1.792—
P63/m (No. 176)hexagonal2.980.0306-6.7006.22
P63/m (No. 176)hexagonal2.930.0463-1.614—
P63/m (No. 176)hexagonal———6.23
P63/m (No. 176)hexagonal———6.30
P63/m (No. 176)hexagonal———5.90
P63/m (No. 176)hexagonal———6.07
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Ge3Bi2O9.

Solid State
Procedure available · ceder_solid_state
Uses

Applications

Where Ge3Bi2O9 is used.

Materials science researchSolid-state chemistry studiesSemiconductor development
Reference

Frequently Asked Questions

Common questions about Ge3Bi2O9, answered from cross-validated data.

What is Ge3Bi2O9?

Ge3Bi2O9 is a metastable semiconducting oxide containing germanium, bismuth, and oxygen that is currently the subject of structural and electronic research.

More questions
What is Ge3Bi2O9 used for?
Ge3Bi2O9 is used in materials science research, solid-state chemistry studies, and semiconductor development.
What is the band gap of Ge3Bi2O9?
Ge3Bi2O9 has a DFT-computed band gap of 2.93–3.04 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ge3Bi2O9 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 3.04 eV (an insulator or wide-band-gap material).
Is Ge3Bi2O9 thermodynamically stable?
Ge3Bi2O9 has a lowest energy above hull of 0.006 eV/atom (near hull).
What is the crystal structure of Ge3Bi2O9?
The reference structure of Ge3Bi2O9 is hexagonal symmetry, space group P63/m (No. 176).
What is the density of Ge3Bi2O9?
The computed density of the ground-state structure of Ge3Bi2O9 is 6.22 g/cm³.
How many polymorphs of Ge3Bi2O9 are known?
5 structures of Ge3Bi2O9 are reported across 3 databases, spanning 1 distinct space group.
How is Ge3Bi2O9 synthesized?
Literature-reported routes for Ge3Bi2O9 include solid state.
What elements does Ge3Bi2O9 contain?
Ge3Bi2O9 contains Bi, Ge, and O (3 elements).
Where does the data for Ge3Bi2O9 come from?
Ge3Bi2O9 data is cross-referenced from oqmd, materials_project, jarvis, cod, mpaloe.
Comparison

How It Compares

As a unique ternary oxide, Ge3Bi2O9 occupies a distinct position in the landscape of bismuth-germanium-oxygen compounds. While it lacks direct structural siblings in this specific class, its metastable character distinguishes it from more common, highly stable oxides, positioning it as a specialized material for fundamental studies in phase control and structural evolution.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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