Ge3As4
Ge3As4 is a metastable semiconducting material composed of germanium and arsenic.
About Ge3As4
Ge3As4 is a semiconducting binary compound formed from germanium and arsenic. As a metastable material, it represents a unique phase within the germanium-arsenic system, offering distinct structural configurations that are of interest for fundamental materials science studies.
Its semiconducting nature makes it a subject of investigation for potential electronic applications. Because it exists in a metastable state, researchers focus on understanding the conditions required for its synthesis and the stability of its various structural forms.
Key Properties
Cross-validated computational properties for Ge3As4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Ge3As4. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for Ge3As4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 0.22 | 0.0475 | 0.002 | — |
| P-43m (No. 215) | cubic | 0.19 | 0.0529 | 0.010 | — |
| P-43m (No. 215) | cubic | 0.16 | 0.0545 | -14.356 | 5.27 |
| C2/m (No. 12) | monoclinic | — | — | — | 4.33 |
| Pmmm (No. 47) | orthorhombic | — | — | — | 5.46 |
| C2/m (No. 12) | monoclinic | — | — | — | 3.66 |
| P-43m (No. 215) | cubic | — | — | — | 5.13 |
| P-43m (No. 215) | cubic | — | — | — | 5.38 |
| P-43m (No. 215) | cubic | — | — | — | 5.30 |
Applications
Where Ge3As4 is used.
Frequently Asked Questions
Common questions about Ge3As4, answered from cross-validated data.
What is Ge3As4?
Ge3As4 is a metastable semiconducting material composed of germanium and arsenic.
What is Ge3As4 used for?
What is the band gap of Ge3As4?
Is Ge3As4 a metal, semiconductor, or insulator?
Is Ge3As4 thermodynamically stable?
What is the crystal structure of Ge3As4?
How many polymorphs of Ge3As4 are known?
What elements does Ge3As4 contain?
Where does the data for Ge3As4 come from?
How It Compares
As a specialized binary phase, Ge3As4 occupies a unique niche in the landscape of germanium-arsenic compounds, serving as a distinct alternative to more common, thermodynamically stable stoichiometries within the semiconductor family.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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