Ge2N2O

Ge2N2O is a semiconducting oxynitride compound that is theoretically stable and serves as a promising subject for research in advanced semiconductor materials.

GeNO
Crystal structure of Ge2N2O (orthorhombic, Cmc21 (No. 36))
Ground-state structure · Materials Project
Overview

About Ge2N2O

Ge2N2O is a semiconducting oxynitride compound that sits at the intersection of nitride and oxide materials science. Its electronic character suggests potential utility in specialized optoelectronic or semiconductor devices where precise band structure engineering is required.

As a near-hull material, it is considered thermodynamically stable enough to be a target for experimental synthesis. With dozens of reported structures across major databases, it represents a significant subject for computational exploration and future material development.

At a glance

Key Properties

Cross-validated computational properties for Ge2N2O, aggregated across 5 databases.

Band Gap

0.57–2.70 eV
Range across DFT structures · ground state: insulator

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

56
5 databases, 8 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ge2N2O. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.42 / 1.00
Trust tier: low

Hull Spread

0.146 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ge2N2O, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
———0.0000-0.700—
Cmc21 (No. 36)orthorhombic2.700.0251-0.571—
Imm2 (No. 44)orthorhombic2.540.0299-0.567—
Cmc21 (No. 36)orthorhombic2.490.0455-0.551—
Cc (No. 9)monoclinic2.530.0491-0.547—
Cc (No. 9)monoclinic2.360.0796-0.517—
Cmc21 (No. 36)orthorhombic2.620.1462-6.8484.55
Imm2 (No. 44)orthorhombic2.490.1745-6.8194.48
Cc (No. 9)monoclinic2.430.1810-6.8134.60
Cmc21 (No. 36)orthorhombic2.340.1926-6.8014.53
Cc (No. 9)monoclinic2.330.2154-6.7784.70
I41/amd (No. 141)tetragonal2.370.2340-6.7605.86
Uses

Applications

Where Ge2N2O is used.

Semiconductor researchOptoelectronic device developmentMaterials science exploration
Reference

Frequently Asked Questions

Common questions about Ge2N2O, answered from cross-validated data.

What is Ge2N2O?

Ge2N2O is a semiconducting oxynitride compound that is theoretically stable and serves as a promising subject for research in advanced semiconductor materials.

More questions
What is Ge2N2O used for?
Ge2N2O is used in semiconductor research, optoelectronic device development, and materials science exploration.
What is the band gap of Ge2N2O?
Ge2N2O has a DFT-computed band gap of 0.57–2.70 eV across 56 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ge2N2O a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 2.70 eV (a semiconductor). Measured gaps are typically larger.
Is Ge2N2O thermodynamically stable?
Yes — Ge2N2O sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Ge2N2O?
The reference structure of Ge2N2O is orthorhombic symmetry, space group Cmc21 (No. 36).
How many polymorphs of Ge2N2O are known?
56 structures of Ge2N2O are reported across 5 databases, spanning 8 distinct space groups.
What elements does Ge2N2O contain?
Ge2N2O contains Ge, N, and O (3 elements).
Where does the data for Ge2N2O come from?
Ge2N2O data is cross-referenced from oqmd, jarvis, materials_project, cod, mpaloe.
Comparison

How It Compares

As a unique oxynitride, Ge2N2O occupies a specialized niche within the broader family of germanium-based semiconductors. Unlike more conventional binary oxides or nitrides, this ternary compound offers a distinct chemical environment that may allow for tunable electronic properties, positioning it as a promising candidate for research into novel semiconductor architectures.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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