Ge1Se2Sn1
This compound is a ternary chalcogenide semiconductor composed of germanium, tin, and selenium. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its tunable structural and electrical properties.
Key Properties
Cross-validated computational properties for Ge1Se2Sn1, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge1Se2Sn1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pmc21 (No. 26) | orthorhombic | 0.75 | 0.0091 | -4.457 | 5.51 |
| Imm2 (No. 44) | — | — | — | — | — |
| Cm (No. 8) | — | — | — | — | — |
| Pm (No. 6) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| Cmm2 (No. 35) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| R-3m (No. 166) | — | — | — | — | — |
Applications
Where Ge1Se2Sn1 is used.
Frequently Asked Questions
Common questions about Ge1Se2Sn1, answered from cross-validated data.
What is Ge1Se2Sn1?
This compound is a ternary chalcogenide semiconductor composed of germanium, tin, and selenium. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its tunable structural and electrical properties.
What is Ge1Se2Sn1 used for?
What is the band gap of Ge1Se2Sn1?
Is Ge1Se2Sn1 a metal, semiconductor, or insulator?
Is Ge1Se2Sn1 thermodynamically stable?
What is the crystal structure of Ge1Se2Sn1?
What is the density of Ge1Se2Sn1?
How many polymorphs of Ge1Se2Sn1 are known?
What elements does Ge1Se2Sn1 contain?
Where does the data for Ge1Se2Sn1 come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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