Ga6In6Se18
Ga6In6Se18 is a stable, semiconducting gallium-indium-selenide compound utilized in advanced materials research.
About Ga6In6Se18
Ga6In6Se18 is a complex ternary chalcogenide that exhibits semiconducting behavior. As a thermodynamically stable phase located on the convex hull, it represents a robust crystalline arrangement within the gallium-indium-selenium system. Its electronic properties make it an intriguing candidate for specialized semiconductor applications where precise control over charge carrier behavior is required. The material is characterized by a well-defined structural framework that maintains stability under standard conditions, providing a reliable platform for further investigation into its optoelectronic potential. Researchers study this compound to better understand the interplay between its metallic components and the chalcogenide lattice, which dictates its overall performance in solid-state devices.
Key Properties
Cross-validated computational properties for Ga6In6Se18, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga6In6Se18, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P61 (No. 169) | hexagonal | 1.32 | 0.0000 | -16.097 | 5.12 |
| P65 (No. 170) | hexagonal | — | — | — | 0.88 |
| P61 (No. 169) | — | — | — | — | — |
| P61 (No. 169) | — | — | — | — | — |
Applications
Where Ga6In6Se18 is used.
Frequently Asked Questions
Common questions about Ga6In6Se18, answered from cross-validated data.
What is Ga6In6Se18?
Ga6In6Se18 is a stable, semiconducting gallium-indium-selenide compound utilized in advanced materials research.
What is Ga6In6Se18 used for?
What is the band gap of Ga6In6Se18?
Is Ga6In6Se18 a metal, semiconductor, or insulator?
Is Ga6In6Se18 thermodynamically stable?
What is the crystal structure of Ga6In6Se18?
What is the density of Ga6In6Se18?
How many polymorphs of Ga6In6Se18 are known?
What elements does Ga6In6Se18 contain?
Where does the data for Ga6In6Se18 come from?
How It Compares
As a distinct ternary phase, Ga6In6Se18 occupies a unique position in the landscape of gallium-indium-selenides. Unlike simpler binary chalcogenides, this compound leverages the synergistic effects of both gallium and indium to tune its electronic properties, serving as a sophisticated example of how multi-metal coordination can stabilize complex semiconducting architectures.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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