Ga4S36Sb4Tb16
Ga4S36Sb4Tb16 is a stable, semiconducting quaternary compound composed of gallium, sulfur, antimony, and terbium.
About Ga4S36Sb4Tb16
Ga4S36Sb4Tb16 is a complex quaternary chalcogenide that exhibits semiconducting electronic properties. Its position on the thermodynamic convex hull indicates high stability, making it a robust candidate for structural investigation and materials design.
This material is characterized by its significant structural complexity, supported by multiple reported entries across various databases. Its unique combination of gallium, sulfur, antimony, and terbium offers a distinct platform for exploring advanced electronic behavior in multicomponent systems.
Key Properties
Cross-validated computational properties for Ga4S36Sb4Tb16, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga4S36Sb4Tb16, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Aea2 (No. 41) | orthorhombic | 2.01 | 0.0000 | -6.039 | 5.54 |
| — | — | — | — | — | 5.51 |
| — | — | — | — | — | 5.51 |
| Aea2 (No. 41) | — | — | — | — | — |
Applications
Where Ga4S36Sb4Tb16 is used.
Frequently Asked Questions
Common questions about Ga4S36Sb4Tb16, answered from cross-validated data.
What is Ga4S36Sb4Tb16?
Ga4S36Sb4Tb16 is a stable, semiconducting quaternary compound composed of gallium, sulfur, antimony, and terbium.
What is Ga4S36Sb4Tb16 used for?
What is the band gap of Ga4S36Sb4Tb16?
Is Ga4S36Sb4Tb16 a metal, semiconductor, or insulator?
Is Ga4S36Sb4Tb16 thermodynamically stable?
What is the crystal structure of Ga4S36Sb4Tb16?
What is the density of Ga4S36Sb4Tb16?
How many polymorphs of Ga4S36Sb4Tb16 are known?
What elements does Ga4S36Sb4Tb16 contain?
Where does the data for Ga4S36Sb4Tb16 come from?
How It Compares
As a unique quaternary compound, Ga4S36Sb4Tb16 serves as a specialized example of complex chalcogenide chemistry. It represents a stable structural configuration that highlights the diversity of electronic properties achievable within these multi-element systems.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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