Ga4Li4S8
Ga4Li4S8 is a thermodynamically stable semiconducting compound composed of lithium, gallium, and sulfur.
About Ga4Li4S8
Ga4Li4S8 is a complex ternary sulfide composed of gallium, lithium, and sulfur. As a thermodynamically stable material located on the convex hull, it represents a robust structural arrangement that has been identified across multiple independent databases, indicating significant interest in its fundamental properties. Its electronic character as a semiconductor suggests potential utility in optoelectronic or solid-state device architectures. This compound is a subject of ongoing investigation for its role in specialized material systems where stable, semiconducting sulfide frameworks are required for functional performance. Its existence across several reported structures highlights its structural versatility within the broader family of lithium-gallium-sulfur materials.
Key Properties
Cross-validated computational properties for Ga4Li4S8, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga4Li4S8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pna21 (No. 33) | orthorhombic | 2.96 | 0.0000 | -4.580 | 2.92 |
| No. 0 | unknown | — | — | — | 0.73 |
| Pna21 (No. 33) | — | — | — | — | — |
| Pna21 (No. 33) | — | — | — | — | — |
| — | — | — | — | — | 2.42 |
| — | — | — | — | — | 2.36 |
| — | — | — | — | — | 2.36 |
Applications
Where Ga4Li4S8 is used.
Frequently Asked Questions
Common questions about Ga4Li4S8, answered from cross-validated data.
What is Ga4Li4S8?
Ga4Li4S8 is a thermodynamically stable semiconducting compound composed of lithium, gallium, and sulfur.
What is Ga4Li4S8 used for?
What is the band gap of Ga4Li4S8?
Is Ga4Li4S8 a metal, semiconductor, or insulator?
Is Ga4Li4S8 thermodynamically stable?
What is the crystal structure of Ga4Li4S8?
What is the density of Ga4Li4S8?
How many polymorphs of Ga4Li4S8 are known?
What elements does Ga4Li4S8 contain?
Where does the data for Ga4Li4S8 come from?
How It Compares
As a thermodynamically stable ternary sulfide, this compound serves as a distinct reference point for structural studies in the lithium-gallium-sulfur system, offering a well-defined baseline for researchers exploring the stability and electronic behavior of complex chalcogenide semiconductors.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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