Ga2Te3

Ga2Te3 is a stable semiconducting compound formed from gallium and tellurium that exhibits a high degree of structural complexity.

GaTe
Crystal structure of Ga2Te3 (trigonal, R-3m (No. 166))
Ground-state structure · Materials Project
Overview

About Ga2Te3

Ga2Te3 is a binary semiconductor composed of gallium and tellurium. As a thermodynamically stable phase located on the convex hull, it represents a robust configuration within its chemical system, making it a subject of significant interest for structural and electronic characterization.

The compound is characterized by its structural diversity, with numerous reported configurations across various databases. This structural richness highlights its complexity and potential utility in fundamental materials science research, where stable semiconducting phases are essential for exploring new electronic properties.

At a glance

Key Properties

Cross-validated computational properties for Ga2Te3, aggregated across 5 databases.

Band Gap

0.18–0.65 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
4 DFT sources

Structures

35
5 databases, 7 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ga2Te3. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.98 / 1.00
Trust tier: high

Hull Spread

0.006 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ga2Te3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Cc (No. 9)monoclinic0.640.0000-20.2305.40
Cc (No. 9)monoclinic0.590.0000-0.307—
——0.650.0062-0.311—
Imm2 (No. 44)orthorhombic0.180.0145-20.2155.09
——0.310.0780-0.239—
Cm (No. 8)monoclinic0.000.1393-20.0903.97
——0.000.1811-0.136—
Cm (No. 8)monoclinic0.360.1859-20.0443.80
——0.000.2188-0.098—
R-3m (No. 166)trigonal0.000.2973-0.009—
——0.000.31740.001—
R-3m (No. 166)trigonal0.000.3351-19.8956.32
Uses

Applications

Where Ga2Te3 is used.

Semiconductor researchMaterials science studiesElectronic property characterization
Reference

Frequently Asked Questions

Common questions about Ga2Te3, answered from cross-validated data.

What is Ga2Te3?

Ga2Te3 is a stable semiconducting compound formed from gallium and tellurium that exhibits a high degree of structural complexity.

More questions
What is Ga2Te3 used for?
Ga2Te3 is used in semiconductor research, materials science studies, and electronic property characterization.
What is the band gap of Ga2Te3?
Ga2Te3 has a DFT-computed band gap of 0.18–0.65 eV across 35 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ga2Te3 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.65 eV (a semiconductor). Measured gaps are typically larger.
Is Ga2Te3 thermodynamically stable?
Yes — Ga2Te3 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Ga2Te3?
The reference structure of Ga2Te3 is trigonal symmetry, space group R-3m (No. 166).
How many polymorphs of Ga2Te3 are known?
35 structures of Ga2Te3 are reported across 5 databases, spanning 7 distinct space groups.
What elements does Ga2Te3 contain?
Ga2Te3 contains Ga and Te (2 elements).
Where does the data for Ga2Te3 come from?
Ga2Te3 data is cross-referenced from materials_project, jarvis, oqmd, aflow, mpaloe.
Comparison

How It Compares

As a stable binary semiconductor, Ga2Te3 serves as a foundational reference point for gallium-telluride systems, providing a reliable baseline for understanding the phase behavior and electronic properties of chalcogenide-based materials.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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