Ga2In1Sn1
This is a ternary metallic alloy composed of gallium, indium, and tin. It is primarily studied for its unique phase behavior and potential utility in advanced thermal management or flexible electronic systems.
GaInSn
Overview
Key Properties
Cross-validated computational properties for Ga2In1Sn1, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.04 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
1.199 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Above hull
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
26
2 databases, 17 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for Ga2In1Sn1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Immm (No. 71) | orthorhombic | 0.04 | 1.1994 | -16.353 | 0.65 |
| I4/mmm (No. 139) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Pmm2 (No. 25) | — | — | — | — | — |
| C2/m (No. 12) | — | — | — | — | — |
| Imm2 (No. 44) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Cm (No. 8) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| I-4m2 (No. 119) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
Uses
Applications
Where Ga2In1Sn1 is used.
Thermal interface materialsFlexible electronicsLiquid metal cooling systems
Reference
Frequently Asked Questions
Common questions about Ga2In1Sn1, answered from cross-validated data.
What is Ga2In1Sn1?
This is a ternary metallic alloy composed of gallium, indium, and tin. It is primarily studied for its unique phase behavior and potential utility in advanced thermal management or flexible electronic systems.
More questions
What is Ga2In1Sn1 used for?
Ga2In1Sn1 is used in thermal interface materials, flexible electronics, and liquid metal cooling systems.
What is the band gap of Ga2In1Sn1?
Ga2In1Sn1 has a DFT-computed band gap of 0.04 eV across 26 reported structures.
Is Ga2In1Sn1 a metal, semiconductor, or insulator?
With a near-zero band gap it behaves as a (semi)metal.
Is Ga2In1Sn1 thermodynamically stable?
Ga2In1Sn1 has a lowest energy above hull of 1.199 eV/atom (above hull).
What is the crystal structure of Ga2In1Sn1?
The lowest-energy reported polymorph of Ga2In1Sn1 is orthorhombic symmetry, space group Immm (No. 71).
What is the density of Ga2In1Sn1?
The computed density of the ground-state structure of Ga2In1Sn1 is 0.65 g/cm³.
How many polymorphs of Ga2In1Sn1 are known?
26 structures of Ga2In1Sn1 are reported across 2 databases, spanning 17 distinct space groups.
What elements does Ga2In1Sn1 contain?
Ga2In1Sn1 contains Ga, In, and Sn (3 elements).
Where does the data for Ga2In1Sn1 come from?
Ga2In1Sn1 data is cross-referenced from materials_project, aflow.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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