Ga1Os2V1
This is a ternary intermetallic compound composed of gallium, osmium, and vanadium. Such materials are primarily studied in solid-state physics research to explore unique electronic and magnetic properties arising from their specific crystalline structure.
Key Properties
Cross-validated computational properties for Ga1Os2V1, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga1Os2V1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Fm-3m (No. 225) | cubic | 0.00 | 0.0000 | -33.213 | 15.23 |
| Immm (No. 71) | orthorhombic | 0.01 | 3.6775 | -29.535 | 1.12 |
| Immm (No. 71) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| Pmm2 (No. 25) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| R-3m (No. 166) | — | — | — | — | — |
| Cmmm (No. 65) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Pmmm (No. 47) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
Applications
Where Ga1Os2V1 is used.
Frequently Asked Questions
Common questions about Ga1Os2V1, answered from cross-validated data.
What is Ga1Os2V1?
This is a ternary intermetallic compound composed of gallium, osmium, and vanadium. Such materials are primarily studied in solid-state physics research to explore unique electronic and magnetic properties arising from their specific crystalline structure.
What is Ga1Os2V1 used for?
What is the band gap of Ga1Os2V1?
Is Ga1Os2V1 a metal, semiconductor, or insulator?
Is Ga1Os2V1 thermodynamically stable?
What is the crystal structure of Ga1Os2V1?
What is the density of Ga1Os2V1?
How many polymorphs of Ga1Os2V1 are known?
What elements does Ga1Os2V1 contain?
Where does the data for Ga1Os2V1 come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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