Ga1Nb1Os2
This compound is a ternary inorganic material composed of gallium, niobium, and osmium. It is primarily studied by researchers in solid-state chemistry to explore its structural properties and potential electronic characteristics.
GaNbOs
Overview
Key Properties
Cross-validated computational properties for Ga1Nb1Os2, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.24 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
28
2 databases, 17 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for Ga1Nb1Os2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Fm-3m (No. 225) | cubic | 0.00 | 0.0000 | -35.842 | 14.95 |
| Immm (No. 71) | orthorhombic | 0.24 | 3.7631 | -32.079 | 1.19 |
| P2/m (No. 10) | — | — | — | — | — |
| Fm-3m (No. 225) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Imm2 (No. 44) | — | — | — | — | — |
| Immm (No. 71) | — | — | — | — | — |
| Pmm2 (No. 25) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| P2/m (No. 10) | — | — | — | — | — |
| Cm (No. 8) | — | — | — | — | — |
Uses
Applications
Where Ga1Nb1Os2 is used.
Materials science researchSolid-state physics studies
Reference
Frequently Asked Questions
Common questions about Ga1Nb1Os2, answered from cross-validated data.
What is Ga1Nb1Os2?
This compound is a ternary inorganic material composed of gallium, niobium, and osmium. It is primarily studied by researchers in solid-state chemistry to explore its structural properties and potential electronic characteristics.
More questions
What is Ga1Nb1Os2 used for?
Ga1Nb1Os2 is used in materials science research and solid-state physics studies.
What is the band gap of Ga1Nb1Os2?
Ga1Nb1Os2 has a DFT-computed band gap of 0.24 eV across 28 reported structures.
Is Ga1Nb1Os2 a metal, semiconductor, or insulator?
With a band gap up to 0.24 eV it is a semiconductor.
Is Ga1Nb1Os2 thermodynamically stable?
Yes — Ga1Nb1Os2 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Ga1Nb1Os2?
The lowest-energy reported polymorph of Ga1Nb1Os2 is cubic symmetry, space group Fm-3m (No. 225).
What is the density of Ga1Nb1Os2?
The computed density of the ground-state structure of Ga1Nb1Os2 is 14.95 g/cm³.
How many polymorphs of Ga1Nb1Os2 are known?
28 structures of Ga1Nb1Os2 are reported across 2 databases, spanning 17 distinct space groups.
What elements does Ga1Nb1Os2 contain?
Ga1Nb1Os2 contains Ga, Nb, and Os (3 elements).
Where does the data for Ga1Nb1Os2 come from?
Ga1Nb1Os2 data is cross-referenced from materials_project, aflow.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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