Ga1H1Sn1Sr1
Ga1H1Sn1Sr1 is a thermodynamically stable, semiconducting quaternary compound composed of gallium, hydrogen, tin, and strontium.
About Ga1H1Sn1Sr1
Ga1H1Sn1Sr1 is a distinct quaternary compound that exists in a thermodynamically stable state on the convex hull. As a semiconducting material, it offers unique electronic properties that distinguish it from simpler binary or ternary systems, making it a subject of interest for fundamental research into complex hydride-based semiconductors.
Its structural configuration, evidenced by multiple reported arrangements, suggests a versatile framework for exploring electronic behavior. This compound serves as a valuable addition to the study of inorganic materials where the precise coordination of gallium, hydrogen, tin, and strontium dictates its functional utility.
Key Properties
Cross-validated computational properties for Ga1H1Sn1Sr1, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga1H1Sn1Sr1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 0.42 | 0.0000 | -3.521 | 5.11 |
| No. 0 | unknown | — | — | — | 5.09 |
| P3m1 (No. 156) | — | — | — | — | — |
Applications
Where Ga1H1Sn1Sr1 is used.
Frequently Asked Questions
Common questions about Ga1H1Sn1Sr1, answered from cross-validated data.
What is Ga1H1Sn1Sr1?
Ga1H1Sn1Sr1 is a thermodynamically stable, semiconducting quaternary compound composed of gallium, hydrogen, tin, and strontium.
What is Ga1H1Sn1Sr1 used for?
What is the band gap of Ga1H1Sn1Sr1?
Is Ga1H1Sn1Sr1 a metal, semiconductor, or insulator?
Is Ga1H1Sn1Sr1 thermodynamically stable?
What is the crystal structure of Ga1H1Sn1Sr1?
What is the density of Ga1H1Sn1Sr1?
How many polymorphs of Ga1H1Sn1Sr1 are known?
What elements does Ga1H1Sn1Sr1 contain?
Where does the data for Ga1H1Sn1Sr1 come from?
How It Compares
As a unique quaternary compound, Ga1H1Sn1Sr1 occupies a specialized niche in materials research. Without direct structural siblings in this specific chemical family, it stands as an isolated example of stable, complex semiconducting hydrides, providing a critical reference point for future synthetic efforts in this compositional space.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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