Ga1H1Si1Sr1
Ga1H1Si1Sr1 is a semiconducting quaternary hydride compound that is theoretically stable enough to be a target for laboratory synthesis.
About Ga1H1Si1Sr1
Ga1H1Si1Sr1 is a complex quaternary hydride featuring a unique combination of gallium, hydrogen, silicon, and strontium. Its electronic character as a semiconductor suggests it may possess specialized transport properties suitable for electronic or optoelectronic applications.
As a near-hull material, this compound is considered a promising candidate for experimental synthesis. Its structural arrangement provides a foundation for exploring new hydride-based phases that could bridge the gap between traditional inorganic semiconductors and hydrogen-storage materials.
Key Properties
Cross-validated computational properties for Ga1H1Si1Sr1, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga1H1Si1Sr1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 0.42 | 0.0040 | -3.821 | 4.09 |
| No. 0 | unknown | — | — | — | 4.07 |
| P3m1 (No. 156) | — | — | — | — | — |
Applications
Where Ga1H1Si1Sr1 is used.
Frequently Asked Questions
Common questions about Ga1H1Si1Sr1, answered from cross-validated data.
What is Ga1H1Si1Sr1?
Ga1H1Si1Sr1 is a semiconducting quaternary hydride compound that is theoretically stable enough to be a target for laboratory synthesis.
What is Ga1H1Si1Sr1 used for?
What is the band gap of Ga1H1Si1Sr1?
Is Ga1H1Si1Sr1 a metal, semiconductor, or insulator?
Is Ga1H1Si1Sr1 thermodynamically stable?
What is the crystal structure of Ga1H1Si1Sr1?
What is the density of Ga1H1Si1Sr1?
How many polymorphs of Ga1H1Si1Sr1 are known?
What elements does Ga1H1Si1Sr1 contain?
Where does the data for Ga1H1Si1Sr1 come from?
How It Compares
As a unique quaternary hydride, this compound occupies a specialized niche in materials science. Unlike simpler binary or ternary hydrides, its complex composition allows for a highly tunable electronic environment, positioning it as a distinct entry point for researchers investigating the interplay between metallic-like strontium and the semiconducting behavior of the gallium-silicon framework.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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