Ga12Os4
Ga12Os4 is a thermodynamically stable, semiconducting intermetallic compound formed from gallium and osmium.
About Ga12Os4
Ga12Os4 is a distinct intermetallic compound composed of gallium and osmium. As a thermodynamically stable material situated on the convex hull, it represents a robust phase within its compositional system, drawing interest from researchers studying complex metal-metal bonding environments.
This material exhibits semiconducting electronic character, positioning it as a subject of investigation for specialized electronic or optoelectronic applications. Its structural diversity, evidenced by multiple reported configurations across materials databases, highlights its significance in fundamental solid-state chemistry.
Key Properties
Cross-validated computational properties for Ga12Os4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga12Os4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P42/mnm (No. 136) | tetragonal | 0.68 | 0.0000 | -22.143 | 9.28 |
| P42/mnm (No. 136) | — | — | — | — | — |
| P42/mnm (No. 136) | — | — | — | — | — |
| P63/mmc (No. 194) | — | — | — | — | — |
| Pnma (No. 62) | — | — | — | — | — |
| P42/mnm (No. 136) | — | — | — | — | — |
| — | — | — | — | — | 7.22 |
Applications
Where Ga12Os4 is used.
Frequently Asked Questions
Common questions about Ga12Os4, answered from cross-validated data.
What is Ga12Os4?
Ga12Os4 is a thermodynamically stable, semiconducting intermetallic compound formed from gallium and osmium.
What is Ga12Os4 used for?
What is the band gap of Ga12Os4?
Is Ga12Os4 a metal, semiconductor, or insulator?
Is Ga12Os4 thermodynamically stable?
What is the crystal structure of Ga12Os4?
What is the density of Ga12Os4?
How many polymorphs of Ga12Os4 are known?
What elements does Ga12Os4 contain?
Where does the data for Ga12Os4 come from?
How It Compares
As a unique intermetallic phase, Ga12Os4 serves as a primary example of how gallium and osmium can organize into stable, semiconducting architectures. It stands as a foundational reference point for exploring the electronic and structural landscape of gallium-rich transition metal compounds.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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