F8O12Os4
F8O12Os4 is a thermodynamically stable semiconducting compound containing osmium, oxygen, and fluorine.
About F8O12Os4
F8O12Os4 is a distinct inorganic compound composed of fluorine, oxygen, and osmium. As a thermodynamically stable material located on the convex hull, it represents a robust structural arrangement within its chemical system. Its electronic character as a semiconductor makes it an intriguing subject for investigation in materials science research. The compound is recognized for its structural diversity, appearing in multiple databases across several reported configurations. This complexity suggests a versatile potential for specialized applications where stable, semiconducting osmium-based frameworks are required for advanced technical development.
Key Properties
Cross-validated computational properties for F8O12Os4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for F8O12Os4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 2.31 | 0.0000 | -6.695 | 5.71 |
| P21/c (No. 14) | — | — | — | — | — |
| — | — | — | — | — | 3.67 |
Frequently Asked Questions
Common questions about F8O12Os4, answered from cross-validated data.
What is F8O12Os4?
F8O12Os4 is a thermodynamically stable semiconducting compound containing osmium, oxygen, and fluorine.
What is the band gap of F8O12Os4?
Is F8O12Os4 a metal, semiconductor, or insulator?
Is F8O12Os4 thermodynamically stable?
What is the crystal structure of F8O12Os4?
What is the density of F8O12Os4?
How many polymorphs of F8O12Os4 are known?
What elements does F8O12Os4 contain?
Where does the data for F8O12Os4 come from?
How It Compares
As a unique member of its chemical class, F8O12Os4 serves as a foundational example of how osmium can integrate with fluorine and oxygen to form stable, semiconducting architectures. Unlike more common binary oxides, this complex stoichiometry highlights the potential for intricate bonding environments that define its specific electronic behavior.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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