F8H4N4O12Xe4

F8H4N4O12Xe4 is a semiconducting xenon-based inorganic compound that is considered a viable candidate for synthesis due to its position near the thermodynamic stability hull.

FHNOXe
Crystal structure of F8H4N4O12Xe4 (orthorhombic, Pnma (No. 62))
Ground-state structure · Materials Project
Overview

About F8H4N4O12Xe4

F8H4N4O12Xe4 is a complex inorganic compound incorporating xenon, fluorine, nitrogen, hydrogen, and oxygen. Its electronic character is defined as semiconducting, marking it as a unique candidate for specialized chemical research involving noble gas derivatives. The compound is positioned near the thermodynamic stability hull, which indicates that it is a likely synthesizable material. Its structural complexity is reflected in the multiple reported configurations identified within the current materials database.

At a glance

Key Properties

Cross-validated computational properties for F8H4N4O12Xe4, aggregated across 3 databases.

Band Gap

2.38 eV
Range across DFT structures

Energy Above Hull

0.007 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

3
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for F8H4N4O12Xe4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pnma (No. 62)orthorhombic2.380.0075-4.6572.78
No. 0unknown0.82
Pnma (No. 62)
Uses

Applications

Where F8H4N4O12Xe4 is used.

Advanced chemical synthesis researchNoble gas derivative studiesFundamental materials science exploration
Reference

Frequently Asked Questions

Common questions about F8H4N4O12Xe4, answered from cross-validated data.

What is F8H4N4O12Xe4?

F8H4N4O12Xe4 is a semiconducting xenon-based inorganic compound that is considered a viable candidate for synthesis due to its position near the thermodynamic stability hull.

More questions
What is F8H4N4O12Xe4 used for?
F8H4N4O12Xe4 is used in advanced chemical synthesis research, noble gas derivative studies, and fundamental materials science exploration.
What is the band gap of F8H4N4O12Xe4?
F8H4N4O12Xe4 has a DFT-computed band gap of 2.38 eV across 3 reported structures.
Is F8H4N4O12Xe4 a metal, semiconductor, or insulator?
With a band gap up to 2.38 eV it is a semiconductor.
Is F8H4N4O12Xe4 thermodynamically stable?
F8H4N4O12Xe4 has a lowest energy above hull of 0.007 eV/atom (near hull (likely stable)).
What is the crystal structure of F8H4N4O12Xe4?
The lowest-energy reported polymorph of F8H4N4O12Xe4 is orthorhombic symmetry, space group Pnma (No. 62).
What is the density of F8H4N4O12Xe4?
The computed density of the ground-state structure of F8H4N4O12Xe4 is 2.78 g/cm³.
How many polymorphs of F8H4N4O12Xe4 are known?
3 structures of F8H4N4O12Xe4 are reported across 3 databases, spanning 2 distinct space groups.
What elements does F8H4N4O12Xe4 contain?
F8H4N4O12Xe4 contains F, H, N, O, and Xe (5 elements).
Where does the data for F8H4N4O12Xe4 come from?
F8H4N4O12Xe4 data is cross-referenced from materials_project, cod, aflow.
Comparison

How It Compares

As an unclassified material with no direct structural siblings in this dataset, F8H4N4O12Xe4 serves as a distinct example of how xenon can be integrated into high-complexity molecular frameworks. Its near-hull stability distinguishes it as a compelling target for experimental validation compared to more volatile or highly unstable theoretical xenon species.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

Analyze F8H4N4O12Xe4 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →