F4In4O12Te4
This compound is an inorganic material composed of indium, tellurium, oxygen, and fluorine. It is primarily studied in academic research settings for its structural properties and potential behavior in solid-state chemistry.
FInOTe
Overview
Key Properties
Cross-validated computational properties for F4In4O12Te4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
3.18 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
3
3 databases, 2 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for F4In4O12Te4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 3.18 | 0.0000 | -5.759 | 5.57 |
| No. 0 | unknown | — | — | — | 1.49 |
| P21/c (No. 14) | — | — | — | — | — |
Uses
Applications
Where F4In4O12Te4 is used.
Solid-state chemistry researchMaterials science exploration
Reference
Frequently Asked Questions
Common questions about F4In4O12Te4, answered from cross-validated data.
What is F4In4O12Te4?
This compound is an inorganic material composed of indium, tellurium, oxygen, and fluorine. It is primarily studied in academic research settings for its structural properties and potential behavior in solid-state chemistry.
More questions
What is F4In4O12Te4 used for?
F4In4O12Te4 is used in solid-state chemistry research and materials science exploration.
What is the band gap of F4In4O12Te4?
F4In4O12Te4 has a DFT-computed band gap of 3.18 eV across 3 reported structures.
Is F4In4O12Te4 a metal, semiconductor, or insulator?
With a wide band gap up to 3.18 eV it is an insulator / wide-band-gap material.
Is F4In4O12Te4 thermodynamically stable?
Yes — F4In4O12Te4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of F4In4O12Te4?
The lowest-energy reported polymorph of F4In4O12Te4 is monoclinic symmetry, space group P21/c (No. 14).
What is the density of F4In4O12Te4?
The computed density of the ground-state structure of F4In4O12Te4 is 5.57 g/cm³.
How many polymorphs of F4In4O12Te4 are known?
3 structures of F4In4O12Te4 are reported across 3 databases, spanning 2 distinct space groups.
What elements does F4In4O12Te4 contain?
F4In4O12Te4 contains F, In, O, and Te (4 elements).
Where does the data for F4In4O12Te4 come from?
F4In4O12Te4 data is cross-referenced from materials_project, cod, aflow.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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