F12O4Rb4V4

F12O4Rb4V4 is a thermodynamically stable, semiconducting quaternary compound composed of rubidium, vanadium, oxygen, and fluorine.

FORbV
Crystal structure of F12O4Rb4V4 (orthorhombic, Pbam (No. 55))
Ground-state structure · Materials Project
Overview

About F12O4Rb4V4

F12O4Rb4V4 is a complex inorganic compound composed of fluorine, oxygen, rubidium, and vanadium. As a thermodynamically stable material situated on the convex hull, it represents a robust structural configuration that is of significant interest for fundamental solid-state studies.

The electronic character of this material is semiconducting, which suggests potential utility in electronic or optoelectronic applications. Given its unique elemental composition, it serves as a specialized subject for researchers investigating the interplay between transition metals and halide-oxide frameworks.

At a glance

Key Properties

Cross-validated computational properties for F12O4Rb4V4, aggregated across 3 databases.

Band Gap

2.73 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

4
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for F12O4Rb4V4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pbam (No. 55)orthorhombic2.700.0000-6.4343.38
Pbam (No. 55)orthorhombic2.730.0015-6.4333.65
No. 0unknown0.91
Pbam (No. 55)
Uses

Applications

Where F12O4Rb4V4 is used.

Materials science researchSolid-state electronic development
Reference

Frequently Asked Questions

Common questions about F12O4Rb4V4, answered from cross-validated data.

What is F12O4Rb4V4?

F12O4Rb4V4 is a thermodynamically stable, semiconducting quaternary compound composed of rubidium, vanadium, oxygen, and fluorine.

More questions
What is F12O4Rb4V4 used for?
F12O4Rb4V4 is used in materials science research and solid-state electronic development.
What is the band gap of F12O4Rb4V4?
F12O4Rb4V4 has a DFT-computed band gap of 2.73 eV across 4 reported structures.
Is F12O4Rb4V4 a metal, semiconductor, or insulator?
With a band gap up to 2.73 eV it is a semiconductor.
Is F12O4Rb4V4 thermodynamically stable?
Yes — F12O4Rb4V4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of F12O4Rb4V4?
The lowest-energy reported polymorph of F12O4Rb4V4 is orthorhombic symmetry, space group Pbam (No. 55).
What is the density of F12O4Rb4V4?
The computed density of the ground-state structure of F12O4Rb4V4 is 3.38 g/cm³.
How many polymorphs of F12O4Rb4V4 are known?
4 structures of F12O4Rb4V4 are reported across 3 databases, spanning 2 distinct space groups.
What elements does F12O4Rb4V4 contain?
F12O4Rb4V4 contains F, O, Rb, and V (4 elements).
Where does the data for F12O4Rb4V4 come from?
F12O4Rb4V4 data is cross-referenced from materials_project, cod, aflow.
Comparison

How It Compares

As a distinct quaternary phase, F12O4Rb4V4 occupies a unique position in materials science. Without direct structural siblings in its immediate class, it serves as a primary example of how the integration of fluorine and oxygen within a rubidium-vanadium lattice can result in a stable, semiconducting electronic profile.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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