Cl2O3SiSr2
Cl2O3SiSr2 has a DFT band gap of 5.12 eV across 1 reported structure in 1 space group; its reference structure is tetragonal (I4/m (No. 87)). Cross-validated across 1 computational databases.
Key Properties
Cross-validated computational properties for Cl2O3SiSr2, aggregated across 1 database.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Cl2O3SiSr2. Tight agreement means computed properties can be trusted without re-running calculations.
Only 1 independent DFT source (materials_project) reports a hull energy for Cl2O3SiSr2, so cross-source agreement can't be assessed yet.
Reported Structures
Lowest-energy structures reported for Cl2O3SiSr2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I4/m (No. 87) | tetragonal | 5.12 | 0.1558 | -6.499 | 3.47 |
Synthesis Routes
Literature-extracted synthesis procedures targeting Cl2O3SiSr2.
Frequently Asked Questions
Common questions about Cl2O3SiSr2, answered from cross-validated data.
What is the band gap of Cl2O3SiSr2?
Cl2O3SiSr2 has a DFT-computed band gap of 5.12 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Cl2O3SiSr2 a metal, semiconductor, or insulator?
Is Cl2O3SiSr2 thermodynamically stable?
What is the crystal structure of Cl2O3SiSr2?
What is the density of Cl2O3SiSr2?
How is Cl2O3SiSr2 synthesized?
What elements does Cl2O3SiSr2 contain?
Where does the data for Cl2O3SiSr2 come from?
Data sources & attribution
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
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