Cd2P4Si2
Cd2P4Si2 is a stable, semiconducting ternary phosphide compound that exhibits diverse structural configurations.
About Cd2P4Si2
Cd2P4Si2 is a complex ternary phosphide that exhibits semiconducting electronic behavior. As a thermodynamically stable phase located on the convex hull, it represents a robust structural arrangement of cadmium, phosphorus, and silicon atoms. Its stability suggests potential for reliable performance in specialized material applications where consistent electronic properties are required. The material is characterized by a significant degree of structural diversity, as evidenced by multiple documented crystallographic configurations across various databases. This structural flexibility makes it a subject of interest for researchers investigating the relationship between atomic arrangement and electronic functionality in phosphide-based semiconductors.
Key Properties
Cross-validated computational properties for Cd2P4Si2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Cd2P4Si2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-42d (No. 122) | tetragonal | 1.43 | 0.0000 | -11.993 | 3.96 |
| Fm-3m (No. 225) | cubic | 0.00 | 0.7971 | -11.196 | 4.84 |
| — | — | — | — | — | 3.88 |
| I-42d (No. 122) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
Applications
Where Cd2P4Si2 is used.
Patent Landscape
3 patents reference Cd2P4Si2 or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 8248032 | Charging system for prioritizing load consumption in a notebook computer | — | — |
| 8263193 | Vacuum treatment method | — | — |
| 8268035 | Process for producing refractory metal alloy powders | — | — |
Frequently Asked Questions
Common questions about Cd2P4Si2, answered from cross-validated data.
What is Cd2P4Si2?
Cd2P4Si2 is a stable, semiconducting ternary phosphide compound that exhibits diverse structural configurations.
What is Cd2P4Si2 used for?
What is the band gap of Cd2P4Si2?
Is Cd2P4Si2 a metal, semiconductor, or insulator?
Is Cd2P4Si2 thermodynamically stable?
What is the crystal structure of Cd2P4Si2?
What is the density of Cd2P4Si2?
How many polymorphs of Cd2P4Si2 are known?
What elements does Cd2P4Si2 contain?
Where does the data for Cd2P4Si2 come from?
How It Compares
As a unique ternary compound within its chemical space, Cd2P4Si2 serves as a foundational example of how cadmium, phosphorus, and silicon can integrate into a stable, semiconducting framework. Unlike more common binary semiconductors, this material offers a distinct structural complexity that highlights the potential for tuning electronic properties through multi-element coordination.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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