Cd1Mn1Te2
cadmium manganese telluride · CMT, Mn-doped CdTe
Cadmium manganese telluride is a dilute magnetic semiconductor formed by incorporating manganese into a cadmium telluride crystal lattice. It is primarily studied and utilized for its unique magneto-optical properties and potential in spintronic device development.
Key Properties
Cross-validated computational properties for cadmium manganese telluride, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Cd1Mn1Te2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| R3m (No. 160) | trigonal | 0.40 | 0.0000 | -22.000 | 5.20 |
| P4/mmm (No. 123) | tetragonal | 0.00 | 0.1435 | -21.856 | 6.52 |
| I-42d (No. 122) | tetragonal | 0.00 | 0.1982 | -21.801 | 5.89 |
| Cmmm (No. 65) | — | — | — | — | — |
| Pm (No. 6) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| I4/mmm (No. 139) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| F-43m (No. 216) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
Applications
Where cadmium manganese telluride is used.
Patent Landscape
3 patents reference Cd1Mn1Te2 or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 8248032 | Charging system for prioritizing load consumption in a notebook computer | — | — |
| 8263193 | Vacuum treatment method | — | — |
| 8268035 | Process for producing refractory metal alloy powders | — | — |
Frequently Asked Questions
Common questions about cadmium manganese telluride, answered from cross-validated data.
What is Cd1Mn1Te2?
Cadmium manganese telluride is a dilute magnetic semiconductor formed by incorporating manganese into a cadmium telluride crystal lattice. It is primarily studied and utilized for its unique magneto-optical properties and potential in spintronic device development.
What is Cd1Mn1Te2 used for?
What is the band gap of Cd1Mn1Te2?
Is Cd1Mn1Te2 a metal, semiconductor, or insulator?
Is Cd1Mn1Te2 thermodynamically stable?
What is the crystal structure of Cd1Mn1Te2?
What is the density of Cd1Mn1Te2?
How many polymorphs of Cd1Mn1Te2 are known?
What elements does Cd1Mn1Te2 contain?
Where does the data for Cd1Mn1Te2 come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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