C8N8S16
C8N8S16 is a metastable, semiconducting carbon-nitrogen-sulfur compound investigated for its potential role in specialized electronic materials.
About C8N8S16
C8N8S16 is a complex carbon-nitrogen-sulfur compound that exhibits semiconducting electronic behavior. Its structural arrangement suggests a specialized role in materials research, particularly where specific electronic transitions are required for advanced device functionality. As a material that sits above the thermodynamic hull, it is considered metastable under standard conditions. This instability makes it a subject of significant interest for synthesis studies, as researchers investigate the conditions under which such complex architectures can be stabilized or utilized in transient electronic applications.
Key Properties
Cross-validated computational properties for C8N8S16, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for C8N8S16, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 2.99 | 0.2566 | -8.529 | 1.48 |
| P21/c (No. 14) | — | — | — | — | — |
| — | — | — | — | — | 1.47 |
Applications
Where C8N8S16 is used.
Frequently Asked Questions
Common questions about C8N8S16, answered from cross-validated data.
What is C8N8S16?
C8N8S16 is a metastable, semiconducting carbon-nitrogen-sulfur compound investigated for its potential role in specialized electronic materials.
What is C8N8S16 used for?
What is the band gap of C8N8S16?
Is C8N8S16 a metal, semiconductor, or insulator?
Is C8N8S16 thermodynamically stable?
What is the crystal structure of C8N8S16?
What is the density of C8N8S16?
How many polymorphs of C8N8S16 are known?
What elements does C8N8S16 contain?
Where does the data for C8N8S16 come from?
How It Compares
As a unique member of this chemical system, C8N8S16 represents a specialized structural configuration that occupies a distinct space in the landscape of carbon-nitrogen-sulfur compounds. Without direct structural siblings in this class, it serves as a primary reference point for understanding how high-sulfur content influences the electronic band structure and overall thermodynamic stability of these complex molecular frameworks.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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