C8H32Bi4Ge4N4S16
C8H32Bi4Ge4N4S16 is a complex, synthesizable semiconducting quaternary sulfide composed of bismuth, germanium, sulfur, and organic components.
About C8H32Bi4Ge4N4S16
C8H32Bi4Ge4N4S16 is a complex quaternary sulfide compound containing bismuth and germanium. Its electronic structure characterizes it as a semiconductor, positioning it as a subject of interest for researchers investigating specialized electronic and optoelectronic materials.
The compound is identified as a near-hull phase, indicating it possesses favorable thermodynamic stability that suggests it is likely synthesizable under controlled laboratory conditions. Its structural complexity and composition make it a distinct entry within the landscape of chalcogenide-based materials.
Key Properties
Cross-validated computational properties for C8H32Bi4Ge4N4S16, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for C8H32Bi4Ge4N4S16, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21 (No. 4) | monoclinic | 2.43 | 0.0250 | -5.045 | 2.88 |
| No. 0 | unknown | — | — | — | 1.58 |
| — | — | — | — | — | 2.91 |
Applications
Where C8H32Bi4Ge4N4S16 is used.
Frequently Asked Questions
Common questions about C8H32Bi4Ge4N4S16, answered from cross-validated data.
What is C8H32Bi4Ge4N4S16?
C8H32Bi4Ge4N4S16 is a complex, synthesizable semiconducting quaternary sulfide composed of bismuth, germanium, sulfur, and organic components.
What is C8H32Bi4Ge4N4S16 used for?
What is the band gap of C8H32Bi4Ge4N4S16?
Is C8H32Bi4Ge4N4S16 a metal, semiconductor, or insulator?
Is C8H32Bi4Ge4N4S16 thermodynamically stable?
What is the crystal structure of C8H32Bi4Ge4N4S16?
What is the density of C8H32Bi4Ge4N4S16?
How many polymorphs of C8H32Bi4Ge4N4S16 are known?
What elements does C8H32Bi4Ge4N4S16 contain?
Where does the data for C8H32Bi4Ge4N4S16 come from?
How It Compares
As a unique quaternary sulfide, this compound represents a specialized niche in materials science. Unlike simpler binary or ternary sulfides, its intricate stoichiometry allows for a highly tailored electronic environment, serving as a template for exploring how multi-element integration influences semiconducting behavior in complex crystalline lattices.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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