C2F2N10O6S10
C2F2N10O6S10 is a complex, semiconducting molecular compound characterized by its high structural density and thermodynamic instability.
About C2F2N10O6S10
C2F2N10O6S10 is a complex molecular assembly featuring a dense arrangement of carbon, fluorine, nitrogen, oxygen, and sulfur atoms. Its electronic character is identified as semiconducting, positioning it as an intriguing candidate for specialized electronic studies despite its structural complexity.
This material is currently categorized as thermodynamically unstable, as it exists above the hull in energy landscapes. While data on this compound is limited, its presence across multiple structural databases highlights its role as a subject of ongoing theoretical investigation in materials science.
Key Properties
Cross-validated computational properties for C2F2N10O6S10, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for C2F2N10O6S10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 1.88 | 0.3428 | -6.339 | 1.96 |
| P-1 (No. 2) | — | — | — | — | — |
| — | — | — | — | — | 1.96 |
Frequently Asked Questions
Common questions about C2F2N10O6S10, answered from cross-validated data.
What is C2F2N10O6S10?
C2F2N10O6S10 is a complex, semiconducting molecular compound characterized by its high structural density and thermodynamic instability.
What is the band gap of C2F2N10O6S10?
Is C2F2N10O6S10 a metal, semiconductor, or insulator?
Is C2F2N10O6S10 thermodynamically stable?
What is the crystal structure of C2F2N10O6S10?
What is the density of C2F2N10O6S10?
How many polymorphs of C2F2N10O6S10 are known?
What elements does C2F2N10O6S10 contain?
Where does the data for C2F2N10O6S10 come from?
How It Compares
As a unique and highly specific chemical entity, this compound occupies a distinct niche in materials research. Without direct structural siblings, it serves as a standalone example of how complex poly-elemental frameworks can be modeled to explore potential semiconducting behaviors in unstable configurations.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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