BiIrSe

BiIrSe has a DFT band gap of 0.53 eV across 3 reported structures in 1 space group. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for BiIrSe, aggregated across 2 databases.

Band Gap

0.53 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

3
2 databases, 1 space group
Reference

Frequently Asked Questions

Common questions about BiIrSe, answered from cross-validated data.

What is the band gap of BiIrSe?

BiIrSe has a DFT-computed band gap of 0.53 eV across 3 reported structures.

More questions
Is BiIrSe a metal, semiconductor, or insulator?
With a band gap up to 0.53 eV it is a semiconductor.
Is BiIrSe thermodynamically stable?
Yes — BiIrSe sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of BiIrSe are known?
3 structures of BiIrSe are reported across 2 databases, spanning 1 distinct space group.
What elements does BiIrSe contain?
BiIrSe contains Bi, Ir, and Se (3 elements).
Where does the data for BiIrSe come from?
BiIrSe data is cross-referenced from latticegraph.
Reading

Related Research

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Related Compounds

Other Platinum-Group Alloy Catalysts in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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