Bi4O32Te4W6
Bi4O32Te4W6 is a complex, insulating quaternary oxide that is considered thermodynamically accessible for synthesis.
About Bi4O32Te4W6
Bi4O32Te4W6 is a complex multicomponent oxide characterized by its wide-gap insulating electronic profile. Its composition, involving heavy elements like bismuth and tellurium alongside tungsten, suggests a sophisticated crystal chemistry that is of significant interest for fundamental materials research.
As a near-hull compound, it occupies a favorable position in the thermodynamic landscape, indicating that it is likely synthesizable under appropriate experimental conditions. The existence of multiple reported structural variations highlights its versatility and the potential for tuning its properties through precise synthesis methods.
Key Properties
Cross-validated computational properties for Bi4O32Te4W6, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Bi4O32Te4W6, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/c (No. 15) | monoclinic | 3.07 | 0.0021 | -7.660 | 7.42 |
| C2/c (No. 15) | — | — | — | — | — |
| — | — | — | — | — | 7.48 |
| — | — | — | — | — | 7.46 |
| — | — | — | — | — | 7.48 |
Applications
Where Bi4O32Te4W6 is used.
Frequently Asked Questions
Common questions about Bi4O32Te4W6, answered from cross-validated data.
What is Bi4O32Te4W6?
Bi4O32Te4W6 is a complex, insulating quaternary oxide that is considered thermodynamically accessible for synthesis.
What is Bi4O32Te4W6 used for?
What is the band gap of Bi4O32Te4W6?
Is Bi4O32Te4W6 a metal, semiconductor, or insulator?
Is Bi4O32Te4W6 thermodynamically stable?
What is the crystal structure of Bi4O32Te4W6?
What is the density of Bi4O32Te4W6?
How many polymorphs of Bi4O32Te4W6 are known?
What elements does Bi4O32Te4W6 contain?
Where does the data for Bi4O32Te4W6 come from?
How It Compares
As a unique multicomponent oxide, this compound serves as a distinct example of how bismuth, tellurium, and tungsten can integrate into a stable, insulating lattice, setting a benchmark for future exploration of similar complex quaternary oxides.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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