Bi3In4S10
Bi3In4S10 has a DFT band gap of 0.93 eV across 2 reported structures in 2 space groups; its reference structure is monoclinic (Pm (No. 6)). Cross-validated across 2 computational databases.
Key Properties
Cross-validated computational properties for Bi3In4S10, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Bi3In4S10. Tight agreement means computed properties can be trusted without re-running calculations.
Only 1 independent DFT source (materials_project) reports a hull energy for Bi3In4S10, so cross-source agreement can't be assessed yet.
Reported Structures
Lowest-energy structures reported for Bi3In4S10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P1 (No. 1) | triclinic | 0.93 | 0.0086 | -20.954 | 5.76 |
| Pm (No. 6) | monoclinic | — | — | — | 6.02 |
Synthesis Routes
Literature-extracted synthesis procedures targeting Bi3In4S10.
Frequently Asked Questions
Common questions about Bi3In4S10, answered from cross-validated data.
What is the band gap of Bi3In4S10?
Bi3In4S10 has a DFT-computed band gap of 0.93 eV across 2 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Bi3In4S10 a metal, semiconductor, or insulator?
Is Bi3In4S10 thermodynamically stable?
What is the crystal structure of Bi3In4S10?
What is the density of Bi3In4S10?
How many polymorphs of Bi3In4S10 are known?
How is Bi3In4S10 synthesized?
What elements does Bi3In4S10 contain?
Where does the data for Bi3In4S10 come from?
Data sources & attribution
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
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