Bi12O32Re4
Bi12O32Re4 is a stable, semiconducting bismuth-rhenium oxide used in advanced materials research.
About Bi12O32Re4
Bi12O32Re4 is a complex bismuth-rhenium oxide that occupies a stable position on the thermodynamic convex hull. Its electronic character as a semiconductor makes it a subject of interest for fundamental studies in solid-state chemistry and materials design.
Given its structural complexity and the multiple reported configurations in databases, this compound serves as a key example of how heavy metal oxides can achieve stable, well-defined phases. Its unique composition allows researchers to investigate the interplay between bismuth and rhenium in an oxygen-rich environment.
Key Properties
Cross-validated computational properties for Bi12O32Re4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Bi12O32Re4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P213 (No. 198) | cubic | 2.73 | 0.0000 | -7.209 | 8.13 |
| I213 (No. 199) | cubic | 2.69 | 0.0030 | -7.206 | 8.22 |
| — | — | — | — | — | 6.35 |
| I213 (No. 199) | — | — | — | — | — |
| I213 (No. 199) | — | — | — | — | — |
| I213 (No. 199) | — | — | — | — | — |
Applications
Where Bi12O32Re4 is used.
Frequently Asked Questions
Common questions about Bi12O32Re4, answered from cross-validated data.
What is Bi12O32Re4?
Bi12O32Re4 is a stable, semiconducting bismuth-rhenium oxide used in advanced materials research.
What is Bi12O32Re4 used for?
What is the band gap of Bi12O32Re4?
Is Bi12O32Re4 a metal, semiconductor, or insulator?
Is Bi12O32Re4 thermodynamically stable?
What is the crystal structure of Bi12O32Re4?
What is the density of Bi12O32Re4?
How many polymorphs of Bi12O32Re4 are known?
What elements does Bi12O32Re4 contain?
Where does the data for Bi12O32Re4 come from?
How It Compares
As a distinct oxide phase, Bi12O32Re4 represents a specialized composition within the broader landscape of bismuth-based ternary oxides. It stands out for its thermodynamic stability, providing a reliable reference point for exploring the electronic properties of complex metal-oxide frameworks.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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