BaN

BaN is a metallic barium nitride compound that is characterized by its complex structural landscape and potential thermodynamic instability.

BaN
Crystal structure of BaN (cubic, Fm-3m (No. 225))
Ground-state structure · Materials Project
Overview

About BaN

BaN is a binary compound composed of barium and nitrogen that exhibits metallic electronic behavior. Its lack of a band gap suggests conductive properties that are characteristic of its specific atomic arrangement within the nitride family.

Despite being a subject of significant interest with numerous structural configurations reported across databases, this compound is identified as being above the thermodynamic hull. This indicates that it likely faces stability challenges under standard conditions, making it a focus for researchers studying high-pressure phases or metastable materials.

At a glance

Key Properties

Cross-validated computational properties for BaN, aggregated across 4 databases.

Band Gap

Metallic / not reported

Energy Above Hull

0.430 eV/atom
Best (lowest) across sources

Stability

Unstable
3 DFT sources

Structures

76
4 databases, 14 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of BaN. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.38 / 1.00
Trust tier: low

Hull Spread

0.155 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for BaN, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Fm-3m (No. 225)cubic0.000.4301-0.183—
Fm-3m (No. 225)cubic0.000.5174-5.2505.36
——0.000.58480.028—
——0.000.58530.028—
Pm-3m (No. 221)cubic0.000.65710.044—
——0.000.70170.144—
——0.000.70560.148—
——0.000.75530.198—
——0.000.81120.254—
——0.000.99440.437—
P21/m (No. 11)monoclinic———3.18
P-1 (No. 2)triclinic———3.57
Reference

Frequently Asked Questions

Common questions about BaN, answered from cross-validated data.

What is BaN?

BaN is a metallic barium nitride compound that is characterized by its complex structural landscape and potential thermodynamic instability.

More questions
What is the band gap of BaN?
The reported DFT structures of BaN show no band gap. Standard DFT often misses gaps (especially in transition-metal oxides), so this is not proof the real material is a metal.
Is BaN a metal, semiconductor, or insulator?
DFT calculations predict no band gap. Standard DFT can miss gaps, so measurements are needed to confirm metallic behavior.
Is BaN thermodynamically stable?
BaN has a lowest energy above hull of 0.430 eV/atom (unstable).
What is the crystal structure of BaN?
The reference structure of BaN is cubic symmetry, space group Fm-3m (No. 225).
How many polymorphs of BaN are known?
76 structures of BaN are reported across 4 databases, spanning 14 distinct space groups.
What elements does BaN contain?
BaN contains Ba and N (2 elements).
Where does the data for BaN come from?
BaN data is cross-referenced from jarvis, materials_project, oqmd, mpaloe.
Comparison

How It Compares

As a unique metallic nitride, BaN occupies a specialized niche in materials science where its stability profile distinguishes it from more common, highly stable binary nitrides. Its structural diversity across reported databases highlights its complexity as a material that remains a subject of ongoing theoretical and experimental investigation.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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