BaInP
Barium indium phosphide is a ternary semiconductor material characterized by its specific crystalline structure. It is primarily studied in academic research for its electronic properties and potential utility in advanced materials science applications.
Key Properties
Cross-validated computational properties for BaInP, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for BaInP, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/m (No. 11) | monoclinic | 0.25 | 0.0000 | -4.211 | 5.54 |
| F-43m (No. 216) | — | — | — | — | — |
| — | — | — | — | — | 5.35 |
Applications
Where BaInP is used.
Frequently Asked Questions
Common questions about BaInP, answered from cross-validated data.
What is BaInP?
Barium indium phosphide is a ternary semiconductor material characterized by its specific crystalline structure. It is primarily studied in academic research for its electronic properties and potential utility in advanced materials science applications.
What is BaInP used for?
What is the band gap of BaInP?
Is BaInP a metal, semiconductor, or insulator?
Is BaInP thermodynamically stable?
What is the crystal structure of BaInP?
What is the density of BaInP?
How many polymorphs of BaInP are known?
What elements does BaInP contain?
Where does the data for BaInP come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
Analyze BaInP in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.
Explore the Platform →