BaGaSb

BaGaSb has a DFT band gap of 0.03 eV across 2 reported structures in 2 space groups. Cross-validated across 2 computational databases.

BaGaSb
At a glance

Key Properties

Cross-validated computational properties for BaGaSb, aggregated across 2 databases.

Band Gap

0.03 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

2
2 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about BaGaSb, answered from cross-validated data.

What is the band gap of BaGaSb?

BaGaSb has a DFT-computed band gap of 0.03 eV across 2 reported structures.

More questions
Is BaGaSb a metal, semiconductor, or insulator?
With a near-zero band gap it behaves as a (semi)metal.
Is BaGaSb thermodynamically stable?
Yes — BaGaSb sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of BaGaSb are known?
2 structures of BaGaSb are reported across 2 databases, spanning 2 distinct space groups.
What elements does BaGaSb contain?
BaGaSb contains Ba, Ga, and Sb (3 elements).
Where does the data for BaGaSb come from?
BaGaSb data is cross-referenced from latticegraph.
Reading

Related Research

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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