Ba4Ga2Sm2Te10
Ba4Ga2Sm2Te10 is a complex, semiconducting quaternary telluride compound that is considered a viable candidate for laboratory synthesis.
About Ba4Ga2Sm2Te10
Ba4Ga2Sm2Te10 is a complex quaternary telluride characterized by its semiconducting electronic nature. As a material situated near the thermodynamic hull, it represents a promising candidate for experimental synthesis and structural characterization within the broader family of chalcogenide compounds.
Its unique composition of barium, gallium, samarium, and tellurium suggests a sophisticated crystal lattice capable of hosting interesting electronic properties. This compound serves as a valuable subject for researchers investigating the interplay between rare-earth elements and group thirteen metals in semiconducting frameworks.
Key Properties
Cross-validated computational properties for Ba4Ga2Sm2Te10, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ba4Ga2Sm2Te10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 1.01 | 0.0105 | -4.565 | 5.61 |
| No. 0 | unknown | — | — | — | 2.94 |
| — | — | — | — | — | 5.61 |
Applications
Where Ba4Ga2Sm2Te10 is used.
Frequently Asked Questions
Common questions about Ba4Ga2Sm2Te10, answered from cross-validated data.
What is Ba4Ga2Sm2Te10?
Ba4Ga2Sm2Te10 is a complex, semiconducting quaternary telluride compound that is considered a viable candidate for laboratory synthesis.
What is Ba4Ga2Sm2Te10 used for?
What is the band gap of Ba4Ga2Sm2Te10?
Is Ba4Ga2Sm2Te10 a metal, semiconductor, or insulator?
Is Ba4Ga2Sm2Te10 thermodynamically stable?
What is the crystal structure of Ba4Ga2Sm2Te10?
What is the density of Ba4Ga2Sm2Te10?
How many polymorphs of Ba4Ga2Sm2Te10 are known?
What elements does Ba4Ga2Sm2Te10 contain?
Where does the data for Ba4Ga2Sm2Te10 come from?
How It Compares
As a specialized quaternary telluride, Ba4Ga2Sm2Te10 occupies a distinct niche in materials science, representing a complex structural arrangement that pushes the boundaries of known chalcogenide stability. While it currently stands as a unique entry in this specific compositional space, it serves as a critical reference point for understanding how the integration of samarium into barium-gallium-telluride systems influences electronic behavior.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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