Ba4Dy2Ga2Te10
Ba4Dy2Ga2Te10 is a complex, semiconducting quaternary telluride compound identified as a promising candidate for experimental synthesis.
About Ba4Dy2Ga2Te10
Ba4Dy2Ga2Te10 is a complex quaternary telluride featuring a unique arrangement of barium, dysprosium, gallium, and tellurium atoms. As a semiconducting material, it represents a specialized class of chalcogenides that are of significant interest for their tunable electronic properties and structural diversity. Its status as a near-hull phase suggests that it is a viable target for experimental synthesis and characterization in solid-state chemistry research. The compound's electronic character makes it a candidate for studies involving optoelectronic or thermoelectric phenomena, where the interplay between the rare-earth dysprosium ions and the gallium-tellurium framework can be systematically investigated. Its stability profile indicates that it exists in a favorable energy landscape, supporting its potential for integration into functional material systems.
Key Properties
Cross-validated computational properties for Ba4Dy2Ga2Te10, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ba4Dy2Ga2Te10, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 0.41 | 0.0162 | -4.542 | 5.76 |
| — | — | — | — | — | 5.39 |
| No. 0 | unknown | — | — | — | 1.50 |
Applications
Where Ba4Dy2Ga2Te10 is used.
Frequently Asked Questions
Common questions about Ba4Dy2Ga2Te10, answered from cross-validated data.
What is Ba4Dy2Ga2Te10?
Ba4Dy2Ga2Te10 is a complex, semiconducting quaternary telluride compound identified as a promising candidate for experimental synthesis.
What is Ba4Dy2Ga2Te10 used for?
What is the band gap of Ba4Dy2Ga2Te10?
Is Ba4Dy2Ga2Te10 a metal, semiconductor, or insulator?
Is Ba4Dy2Ga2Te10 thermodynamically stable?
What is the crystal structure of Ba4Dy2Ga2Te10?
What is the density of Ba4Dy2Ga2Te10?
How many polymorphs of Ba4Dy2Ga2Te10 are known?
What elements does Ba4Dy2Ga2Te10 contain?
Where does the data for Ba4Dy2Ga2Te10 come from?
How It Compares
As a relatively rare quaternary compound, Ba4Dy2Ga2Te10 occupies a distinct niche in the landscape of complex telluride semiconductors, serving as a foundational example of how rare-earth and post-transition metal elements can be integrated into stable, non-oxide frameworks.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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