Ba4Dy2Ga2Te10

Ba4Dy2Ga2Te10 is a complex, semiconducting quaternary telluride compound identified as a promising candidate for experimental synthesis.

BaDyGaTe
Crystal structure of Ba4Dy2Ga2Te10
Ground-state structure · Materials Project
Overview

About Ba4Dy2Ga2Te10

Ba4Dy2Ga2Te10 is a complex quaternary telluride featuring a unique arrangement of barium, dysprosium, gallium, and tellurium atoms. As a semiconducting material, it represents a specialized class of chalcogenides that are of significant interest for their tunable electronic properties and structural diversity. Its status as a near-hull phase suggests that it is a viable target for experimental synthesis and characterization in solid-state chemistry research. The compound's electronic character makes it a candidate for studies involving optoelectronic or thermoelectric phenomena, where the interplay between the rare-earth dysprosium ions and the gallium-tellurium framework can be systematically investigated. Its stability profile indicates that it exists in a favorable energy landscape, supporting its potential for integration into functional material systems.

At a glance

Key Properties

Cross-validated computational properties for Ba4Dy2Ga2Te10, aggregated across 3 databases.

Band Gap

0.41 eV
Range across DFT structures

Energy Above Hull

0.016 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

3
3 databases, 2 space groups
Uses

Applications

Where Ba4Dy2Ga2Te10 is used.

Semiconductor researchSolid-state chemistryMaterials science exploration
Reference

Frequently Asked Questions

Common questions about Ba4Dy2Ga2Te10, answered from cross-validated data.

What is Ba4Dy2Ga2Te10?

Ba4Dy2Ga2Te10 is a complex, semiconducting quaternary telluride compound identified as a promising candidate for experimental synthesis.

More questions
What is Ba4Dy2Ga2Te10 used for?
Ba4Dy2Ga2Te10 is used in semiconductor research, solid-state chemistry, and materials science exploration.
What is the band gap of Ba4Dy2Ga2Te10?
Ba4Dy2Ga2Te10 has a DFT-computed band gap of 0.41 eV across 3 reported structures.
Is Ba4Dy2Ga2Te10 a metal, semiconductor, or insulator?
With a band gap up to 0.41 eV it is a semiconductor.
Is Ba4Dy2Ga2Te10 thermodynamically stable?
Ba4Dy2Ga2Te10 has a lowest energy above hull of 0.016 eV/atom (near hull (likely stable)).
How many polymorphs of Ba4Dy2Ga2Te10 are known?
3 structures of Ba4Dy2Ga2Te10 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Ba4Dy2Ga2Te10 contain?
Ba4Dy2Ga2Te10 contains Ba, Dy, Ga, and Te (4 elements).
Where does the data for Ba4Dy2Ga2Te10 come from?
Ba4Dy2Ga2Te10 data is cross-referenced from latticegraph.
Comparison

How It Compares

As a relatively rare quaternary compound, Ba4Dy2Ga2Te10 occupies a distinct niche in the landscape of complex telluride semiconductors, serving as a foundational example of how rare-earth and post-transition metal elements can be integrated into stable, non-oxide frameworks.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Ba4Dy2Ga2Te10 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →