Ba3MgSi2O8
Ba3MgSi2O8 has a DFT band gap of 5.01 eV across 1 reported structure in 1 space group; its reference structure is trigonal (P-3 (No. 147)). Cross-validated across 1 computational databases.
BaMgOSi
At a glance
Key Properties
Cross-validated computational properties for Ba3MgSi2O8, aggregated across 1 database.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
5.01 eV
Range across DFT structures · ground state: insulator
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.018 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Near Hull
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
1
1 database, 1 space group
Validation
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Ba3MgSi2O8. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
1.00 / 1.00
Trust tier: medium
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
0.001 eV
EAH spread across sources
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
2
jarvis, materials_project
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
All match
Crystallography
Reported Structures
Lowest-energy structures reported for Ba3MgSi2O8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3 (No. 147) | trigonal | 5.01 | 0.0176 | -3.156 | — |
| P-3 (No. 147) | trigonal | 4.69 | 0.0182 | -7.451 | 4.99 |
Synthesis
Synthesis Routes
Literature-extracted synthesis procedures targeting Ba3MgSi2O8.
Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference
Frequently Asked Questions
Common questions about Ba3MgSi2O8, answered from cross-validated data.
What is the band gap of Ba3MgSi2O8?
Ba3MgSi2O8 has a DFT-computed band gap of 5.01 eV. Standard DFT underestimates band gaps, so the measured gap is typically larger.
More questions
Is Ba3MgSi2O8 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 5.01 eV (an insulator or wide-band-gap material).
Is Ba3MgSi2O8 thermodynamically stable?
Ba3MgSi2O8 has a lowest energy above hull of 0.018 eV/atom (near hull).
What is the crystal structure of Ba3MgSi2O8?
The reference structure of Ba3MgSi2O8 is trigonal symmetry, space group P-3 (No. 147).
How is Ba3MgSi2O8 synthesized?
Literature-reported routes for Ba3MgSi2O8 include sol gel, solid state (5 procedures documented).
What elements does Ba3MgSi2O8 contain?
Ba3MgSi2O8 contains Ba, Mg, O, and Si (4 elements).
Where does the data for Ba3MgSi2O8 come from?
Ba3MgSi2O8 data is cross-referenced from jarvis, materials_project.
Data sources & attribution
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
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