Ba2Hf7O16

Ba2Hf7O16 is a metastable, wide-band-gap insulating oxide used in advanced materials research.

BaHfO
Crystal structure of Ba2Hf7O16 (trigonal, R-3 (No. 148))
Ground-state structure · Materials Project
Overview

About Ba2Hf7O16

Ba2Hf7O16 is a complex oxide composed of barium, hafnium, and oxygen. As a wide-band-gap insulator, it exhibits electronic properties characteristic of highly stable dielectric materials, despite its own metastable nature. Its unique structural arrangement makes it a subject of interest for fundamental materials research.

Because of its insulating nature, this compound is investigated for its potential utility in electronic components where high-performance dielectric behavior is required. Its structural complexity, evidenced by multiple reported configurations, suggests a versatile framework for exploring oxide-based materials science.

At a glance

Key Properties

Cross-validated computational properties for Ba2Hf7O16, aggregated across 3 databases.

Band Gap

4.04–4.15 eV
Range across DFT structures · ground state: insulator

Energy Above Hull

0.045 eV/atom
Best (lowest) across sources

Stability

Metastable
2 DFT sources

Structures

5
3 databases, 1 space group
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ba2Hf7O16. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.95 / 1.00
Trust tier: medium

Hull Spread

0.012 eV
EAH spread across sources

Sources Compared

2
jarvis, materials_project

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ba2Hf7O16, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R-3 (No. 148)trigonal4.040.0447-9.9909.03
R-3 (No. 148)trigonal4.150.0566-3.695—
R-3 (No. 148)trigonal———9.59
R-3 (No. 148)trigonal———9.03
R-3 (No. 148)trigonal———9.24
Uses

Applications

Where Ba2Hf7O16 is used.

Dielectric researchElectronic component development
Reference

Frequently Asked Questions

Common questions about Ba2Hf7O16, answered from cross-validated data.

What is Ba2Hf7O16?

Ba2Hf7O16 is a metastable, wide-band-gap insulating oxide used in advanced materials research.

More questions
What is Ba2Hf7O16 used for?
Ba2Hf7O16 is used in dielectric research and electronic component development.
What is the band gap of Ba2Hf7O16?
Ba2Hf7O16 has a DFT-computed band gap of 4.04–4.15 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ba2Hf7O16 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 4.15 eV (an insulator or wide-band-gap material).
Is Ba2Hf7O16 thermodynamically stable?
Ba2Hf7O16 has a lowest energy above hull of 0.045 eV/atom (metastable).
What is the crystal structure of Ba2Hf7O16?
The reference structure of Ba2Hf7O16 is trigonal symmetry, space group R-3 (No. 148).
What is the density of Ba2Hf7O16?
The computed density of the ground-state structure of Ba2Hf7O16 is 9.03 g/cm³.
How many polymorphs of Ba2Hf7O16 are known?
5 structures of Ba2Hf7O16 are reported across 3 databases, spanning 1 distinct space group.
What elements does Ba2Hf7O16 contain?
Ba2Hf7O16 contains Ba, Hf, and O (3 elements).
Where does the data for Ba2Hf7O16 come from?
Ba2Hf7O16 data is cross-referenced from materials_project, jarvis, mpaloe.
Comparison

How It Compares

As a member of the barium-hafnium-oxygen system, Ba2Hf7O16 represents a specialized structural phase. While it lacks direct siblings in this specific dataset, it serves as a critical point of comparison for understanding the phase stability and insulating characteristics of complex hafnates.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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