Ba2GeSe4
Barium germanium selenide is a quaternary chalcogenide semiconductor material. It is primarily studied for its potential utility in optoelectronic devices and infrared optical applications.
BaGeSe

Overview
Key Properties
Cross-validated computational properties for Ba2GeSe4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
1.41 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
4
3 databases, 1 space group
Crystallography
Reported Structures
Lowest-energy structures reported for Ba2GeSe4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/m (No. 11) | monoclinic | 1.41 | 0.0000 | -4.830 | 4.95 |
| — | — | — | — | — | 5.13 |
| P21/m (No. 11) | — | — | — | — | — |
| — | — | — | — | — | 5.13 |
Uses
Applications
Where Ba2GeSe4 is used.
Infrared opticsSemiconductor researchNonlinear optical materials
Reference
Frequently Asked Questions
Common questions about Ba2GeSe4, answered from cross-validated data.
What is Ba2GeSe4?
Barium germanium selenide is a quaternary chalcogenide semiconductor material. It is primarily studied for its potential utility in optoelectronic devices and infrared optical applications.
More questions
What is Ba2GeSe4 used for?
Ba2GeSe4 is used in infrared optics, semiconductor research, and nonlinear optical materials.
What is the band gap of Ba2GeSe4?
Ba2GeSe4 has a DFT-computed band gap of 1.41 eV across 4 reported structures.
Is Ba2GeSe4 a metal, semiconductor, or insulator?
With a band gap up to 1.41 eV it is a semiconductor.
Is Ba2GeSe4 thermodynamically stable?
Yes — Ba2GeSe4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of Ba2GeSe4?
The lowest-energy reported polymorph of Ba2GeSe4 is monoclinic symmetry, space group P21/m (No. 11).
What is the density of Ba2GeSe4?
The computed density of the ground-state structure of Ba2GeSe4 is 4.95 g/cm³.
How many polymorphs of Ba2GeSe4 are known?
4 structures of Ba2GeSe4 are reported across 3 databases, spanning 1 distinct space group.
What elements does Ba2GeSe4 contain?
Ba2GeSe4 contains Ba, Ge, and Se (3 elements).
Where does the data for Ba2GeSe4 come from?
Ba2GeSe4 data is cross-referenced from materials_project, omat24, jarvis.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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