BAs

Boron arsenide · Boron monoarsenide

Boron arsenide is a semiconducting compound formed from boron and arsenic that is studied for its specialized electronic and thermal properties.

AsB
Crystal structure of BAs (cubic, F-43m (No. 216))
Ground-state structure · Materials Project
Overview

About Boron arsenide

Boron arsenide is a binary semiconductor composed of boron and arsenic. It is recognized for its intriguing electronic character and has been the subject of extensive structural investigation, appearing in numerous reported configurations across scientific databases.

As a metastable compound, it represents a specialized material within the semiconductor landscape. Its synthesis and stability are of significant interest to researchers aiming to leverage its distinct physical properties for next-generation electronic devices.

At a glance

Key Properties

Cross-validated computational properties for Boron arsenide, aggregated across 3 databases.

Band Gap

1.22–1.42 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.077 eV/atom
Best (lowest) across sources

Stability

Metastable
3 DFT sources

Structures

152
3 databases, 20 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of BAs. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.99 / 1.00
Trust tier: high

Hull Spread

0.004 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for BAs, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
F-43m (No. 216)cubic1.300.0768-0.022—
——1.420.0775-0.022—
F-43m (No. 216)cubic1.200.0804-11.0695.09
F-43m (No. 216)cubic1.420.0835-0.015—
——1.220.0869-0.013—
P63mc (No. 186)hexagonal1.140.0895-11.0595.10
P63mc (No. 186)hexagonal1.360.0958-0.003—
——0.000.58650.487—
——0.000.96790.868—
——0.000.96810.868—
——0.001.18651.087—
——0.001.61161.512—
Uses

Applications

Where Boron arsenide is used.

Semiconductor researchThermal management materialsElectronic device development
Reference

Frequently Asked Questions

Common questions about Boron arsenide, answered from cross-validated data.

What is BAs?

Boron arsenide is a semiconducting compound formed from boron and arsenic that is studied for its specialized electronic and thermal properties.

More questions
What is BAs used for?
Boron arsenide (BAs) is used in semiconductor research, thermal management materials, and electronic device development.
What is the band gap of BAs?
Boron arsenide (BAs) has a DFT-computed band gap of 1.22–1.42 eV across 152 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is BAs a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.42 eV (a semiconductor). Measured gaps are typically larger.
Is BAs thermodynamically stable?
Boron arsenide (BAs) has a lowest energy above hull of 0.077 eV/atom (metastable).
What is the crystal structure of BAs?
The reference structure of Boron arsenide (BAs) is cubic symmetry, space group F-43m (No. 216).
How many polymorphs of BAs are known?
152 structures of BAs are reported across 3 databases, spanning 20 distinct space groups.
What elements does BAs contain?
Boron arsenide (BAs) contains As and B (2 elements).
Where does the data for BAs come from?
BAs data is cross-referenced from jarvis, oqmd, materials_project, mpaloe.
Comparison

How It Compares

As a unique binary semiconductor, boron arsenide occupies a distinct niche in materials science. Unlike more conventional or widely utilized semiconductors, its metastable nature requires precise control during synthesis, making it a subject of fundamental study to understand its potential in high-performance thermal management and electronic circuitry.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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