B4S12Tb4
B4S12Tb4 is a metastable semiconducting compound formed from boron, sulfur, and terbium.
About B4S12Tb4
B4S12Tb4 is a complex ternary compound composed of boron, sulfur, and terbium. As a semiconducting material, it exhibits electronic properties that bridge the gap between conductive and insulating states, making it a subject of interest for specialized solid-state research.
This material is classified as metastable, indicating that its existence depends on specific synthesis conditions rather than being the most energetically favorable state. Its unique atomic arrangement and composition provide a distinct profile within the landscape of rare-earth chalcogenide systems.
Key Properties
Cross-validated computational properties for B4S12Tb4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for B4S12Tb4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pna21 (No. 33) | orthorhombic | 2.33 | 0.0372 | -6.263 | 4.56 |
| No. 0 | unknown | — | — | — | 1.16 |
| Pna21 (No. 33) | — | — | — | — | — |
Frequently Asked Questions
Common questions about B4S12Tb4, answered from cross-validated data.
What is B4S12Tb4?
B4S12Tb4 is a metastable semiconducting compound formed from boron, sulfur, and terbium.
What is the band gap of B4S12Tb4?
Is B4S12Tb4 a metal, semiconductor, or insulator?
Is B4S12Tb4 thermodynamically stable?
What is the crystal structure of B4S12Tb4?
What is the density of B4S12Tb4?
How many polymorphs of B4S12Tb4 are known?
What elements does B4S12Tb4 contain?
Where does the data for B4S12Tb4 come from?
How It Compares
As a unique ternary phase, B4S12Tb4 represents a specialized structural configuration within the broader family of rare-earth boron-sulfur compounds, serving as an example of the complex chemical diversity found in metastable inorganic materials.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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