B4Ge8K4O24
B4Ge8K4O24 is a stable, insulating complex oxide containing boron and germanium that is theoretically accessible for synthesis.
About B4Ge8K4O24
B4Ge8K4O24 is a complex inorganic compound composed of boron, germanium, potassium, and oxygen. As a wide-gap insulator, it exhibits electronic properties characteristic of stable dielectric materials, making it an intriguing subject for fundamental materials research.
Because it sits near the thermodynamic hull, this compound is considered a viable candidate for experimental synthesis. Its unique structural framework suggests potential utility in specialized optical or electronic components where insulating behavior is required.
Key Properties
Cross-validated computational properties for B4Ge8K4O24, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for B4Ge8K4O24, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P212121 (No. 19) | orthorhombic | 3.50 | 0.0097 | -7.031 | 3.54 |
| P212121 (No. 19) | — | — | — | — | — |
| No. 0 | unknown | — | — | — | 0.92 |
Applications
Where B4Ge8K4O24 is used.
Frequently Asked Questions
Common questions about B4Ge8K4O24, answered from cross-validated data.
What is B4Ge8K4O24?
B4Ge8K4O24 is a stable, insulating complex oxide containing boron and germanium that is theoretically accessible for synthesis.
What is B4Ge8K4O24 used for?
What is the band gap of B4Ge8K4O24?
Is B4Ge8K4O24 a metal, semiconductor, or insulator?
Is B4Ge8K4O24 thermodynamically stable?
What is the crystal structure of B4Ge8K4O24?
What is the density of B4Ge8K4O24?
How many polymorphs of B4Ge8K4O24 are known?
What elements does B4Ge8K4O24 contain?
Where does the data for B4Ge8K4O24 come from?
How It Compares
As a specialized borogermanate, B4Ge8K4O24 represents a distinct structural arrangement within the broader family of complex oxide insulators. While it currently stands as a unique entry in this database, its stability profile positions it as a noteworthy example of how heavy metal oxides can be integrated into insulating frameworks.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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