B12S

B12S is a metastable semiconducting material formed from boron and sulfur.

BS
Crystal structure of B12S (trigonal, R-3m (No. 166))
Ground-state structure · Materials Project
Overview

About B12S

B12S is a semiconducting compound composed of boron and sulfur. As a metastable phase, it represents a complex structural arrangement that highlights the diverse bonding capabilities of boron-rich systems.

This material is of significant interest to researchers investigating specialized semiconductors. Its existence within the boron-sulfur chemical space provides insights into the formation of non-equilibrium phases that may offer unique electronic behaviors.

At a glance

Key Properties

Cross-validated computational properties for B12S, aggregated across 4 databases.

Band Gap

1.80 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.076 eV/atom
Best (lowest) across sources

Stability

Metastable
3 DFT sources

Structures

7
4 databases, 2 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of B12S. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.00 / 1.00
Trust tier: low

Hull Spread

0.343 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

Mixed (most: R-3m (No. 166))
Crystallography

Reported Structures

Lowest-energy structures reported for B12S, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R3m (No. 160)trigonal1.800.0755-6.5032.41
R-3m (No. 166)trigonal0.000.38900.337—
R-3m (No. 166)trigonal0.000.4115-6.1672.37
——0.000.41890.335—
R3m (No. 160)trigonal———2.43
R3m (No. 160)trigonal———2.41
R3m (No. 160)trigonal———2.42
Reference

Frequently Asked Questions

Common questions about B12S, answered from cross-validated data.

What is B12S?

B12S is a metastable semiconducting material formed from boron and sulfur.

More questions
What is the band gap of B12S?
B12S has a DFT-computed band gap of 1.80 eV across 7 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is B12S a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.80 eV (a semiconductor). Measured gaps are typically larger.
Is B12S thermodynamically stable?
B12S has a lowest energy above hull of 0.076 eV/atom (metastable).
What is the crystal structure of B12S?
The reference structure of B12S is trigonal symmetry, space group R-3m (No. 166).
How many polymorphs of B12S are known?
7 structures of B12S are reported across 4 databases, spanning 2 distinct space groups.
What elements does B12S contain?
B12S contains B and S (2 elements).
Where does the data for B12S come from?
B12S data is cross-referenced from materials_project, jarvis, oqmd, mpaloe.
Comparison

How It Compares

As a specialized boron-rich semiconductor, B12S occupies a distinct niche in materials science. Unlike more conventional binary semiconductors, its metastable nature requires precise synthesis conditions, positioning it as a subject of fundamental study for those exploring the boundaries of structural stability in boron-based compounds.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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