B12S
This compound is a boron-rich sulfide characterized by a complex crystalline structure based on boron icosahedra. It is primarily studied for its potential as a semiconductor material and for its structural properties in high-performance ceramics.
Key Properties
Cross-validated computational properties for B12S, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for B12S, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| R3m (No. 160) | trigonal | 1.80 | 0.0755 | -6.503 | 2.41 |
| R-3m (No. 166) | trigonal | 0.00 | 0.4115 | -6.167 | 2.37 |
| R-3m (No. 166) | — | — | — | — | — |
| R3m (No. 160) | Trigonal | — | — | — | 2.41 |
| R3m (No. 160) | Trigonal | — | — | — | 2.43 |
| R3m (No. 160) | Trigonal | — | — | — | 2.42 |
Applications
Where B12S is used.
Frequently Asked Questions
Common questions about B12S, answered from cross-validated data.
What is B12S?
This compound is a boron-rich sulfide characterized by a complex crystalline structure based on boron icosahedra. It is primarily studied for its potential as a semiconductor material and for its structural properties in high-performance ceramics.
What is B12S used for?
What is the band gap of B12S?
Is B12S a metal, semiconductor, or insulator?
Is B12S thermodynamically stable?
What is the crystal structure of B12S?
What is the density of B12S?
How many polymorphs of B12S are known?
What elements does B12S contain?
Where does the data for B12S come from?
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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