As8O40Rb8Sn8
As8O40Rb8Sn8 is a thermodynamically stable semiconducting inorganic compound containing arsenic, oxygen, rubidium, and tin.
About As8O40Rb8Sn8
As8O40Rb8Sn8 is a complex inorganic compound composed of arsenic, oxygen, rubidium, and tin. It is characterized by its thermodynamically stable nature, existing on the convex hull, which suggests a robust structural arrangement that resists decomposition under standard conditions.
As a semiconducting material, this compound is of interest for its electronic properties. Its existence across multiple reported structures highlights its versatility and the potential for tuning its characteristics for specialized technological applications.
Key Properties
Cross-validated computational properties for As8O40Rb8Sn8, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As8O40Rb8Sn8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pna21 (No. 33) | orthorhombic | 2.07 | 0.0000 | -6.323 | 4.66 |
| Pna21 (No. 33) | — | — | — | — | — |
| — | — | — | — | — | 4.47 |
| — | — | — | — | — | 4.47 |
Applications
Where As8O40Rb8Sn8 is used.
Frequently Asked Questions
Common questions about As8O40Rb8Sn8, answered from cross-validated data.
What is As8O40Rb8Sn8?
As8O40Rb8Sn8 is a thermodynamically stable semiconducting inorganic compound containing arsenic, oxygen, rubidium, and tin.
What is As8O40Rb8Sn8 used for?
What is the band gap of As8O40Rb8Sn8?
Is As8O40Rb8Sn8 a metal, semiconductor, or insulator?
Is As8O40Rb8Sn8 thermodynamically stable?
What is the crystal structure of As8O40Rb8Sn8?
What is the density of As8O40Rb8Sn8?
How many polymorphs of As8O40Rb8Sn8 are known?
What elements does As8O40Rb8Sn8 contain?
Where does the data for As8O40Rb8Sn8 come from?
How It Compares
As8O40Rb8Sn8 represents a unique structural configuration within its chemical family. As a standalone entry in this assessment, it serves as a primary example of how the integration of alkali metals like rubidium with arsenic-tin-oxide frameworks can yield stable, semiconducting electronic materials.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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