As4Ga2K2O14
As4Ga2K2O14 is a thermodynamically stable semiconducting compound containing arsenic, gallium, potassium, and oxygen.
About As4Ga2K2O14
As4Ga2K2O14 is a complex inorganic compound composed of arsenic, gallium, potassium, and oxygen. As a thermodynamically stable phase residing on the convex hull, it represents a robust crystalline arrangement that is of significant interest for structural characterization in solid-state chemistry.
This material exhibits semiconducting electronic properties, making it a subject of investigation for potential optoelectronic or specialized electronic applications. With multiple reported structures across research databases, it serves as a valuable reference point for understanding the interplay between its constituent elements in complex oxide systems.
Key Properties
Cross-validated computational properties for As4Ga2K2O14, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As4Ga2K2O14, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 2.68 | 0.0005 | -6.315 | 3.84 |
| — | — | — | — | — | 3.13 |
| P-1 (No. 2) | — | — | — | — | — |
Applications
Where As4Ga2K2O14 is used.
Frequently Asked Questions
Common questions about As4Ga2K2O14, answered from cross-validated data.
What is As4Ga2K2O14?
As4Ga2K2O14 is a thermodynamically stable semiconducting compound containing arsenic, gallium, potassium, and oxygen.
What is As4Ga2K2O14 used for?
What is the band gap of As4Ga2K2O14?
Is As4Ga2K2O14 a metal, semiconductor, or insulator?
Is As4Ga2K2O14 thermodynamically stable?
What is the crystal structure of As4Ga2K2O14?
What is the density of As4Ga2K2O14?
How many polymorphs of As4Ga2K2O14 are known?
What elements does As4Ga2K2O14 contain?
Where does the data for As4Ga2K2O14 come from?
How It Compares
As a unique inorganic compound, As4Ga2K2O14 occupies a distinct position in materials research. Without direct structural siblings in its immediate class, it serves as a foundational example of how these specific elements can form stable, semiconducting architectures that warrant further exploration for functional device integration.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
Analyze As4Ga2K2O14 in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.
Explore the Platform →