As4Ca4H4O20Zn4

As4Ca4H4O20Zn4 is a thermodynamically stable, semiconducting inorganic compound with a well-documented structural history.

AsCaHOZn
Crystal structure of As4Ca4H4O20Zn4 (orthorhombic, P212121 (No. 19))
Ground-state structure · Materials Project
Overview

About As4Ca4H4O20Zn4

As4Ca4H4O20Zn4 is a complex inorganic compound characterized by its semiconducting electronic nature. Its presence on the thermodynamic convex hull indicates high stability, making it a robust candidate for structural and functional investigations in materials science research. The material exhibits a well-documented structural profile, supported by multiple entries across major crystallographic databases. This richness in data underscores its significance as a subject for computational and experimental study, particularly for researchers interested in complex oxides and arsenates. Its unique arrangement of calcium, zinc, and arsenic units suggests potential for specialized applications where stable, semiconducting behavior is required.

At a glance

Key Properties

Cross-validated computational properties for As4Ca4H4O20Zn4, aggregated across 4 databases.

Band Gap

2.64 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

6
4 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for As4Ca4H4O20Zn4, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P212121 (No. 19)orthorhombic2.640.0000-6.1684.32
No. 0unknown1.08
P212121 (No. 19)
No. 0unknown1.08
P212121 (No. 19)
P212121 (No. 19)
Uses

Applications

Where As4Ca4H4O20Zn4 is used.

Materials science researchSolid-state chemistry modelingSemiconductor development
Reference

Frequently Asked Questions

Common questions about As4Ca4H4O20Zn4, answered from cross-validated data.

What is As4Ca4H4O20Zn4?

As4Ca4H4O20Zn4 is a thermodynamically stable, semiconducting inorganic compound with a well-documented structural history.

More questions
What is As4Ca4H4O20Zn4 used for?
As4Ca4H4O20Zn4 is used in materials science research, solid-state chemistry modeling, and semiconductor development.
What is the band gap of As4Ca4H4O20Zn4?
As4Ca4H4O20Zn4 has a DFT-computed band gap of 2.64 eV across 6 reported structures.
Is As4Ca4H4O20Zn4 a metal, semiconductor, or insulator?
With a band gap up to 2.64 eV it is a semiconductor.
Is As4Ca4H4O20Zn4 thermodynamically stable?
Yes — As4Ca4H4O20Zn4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of As4Ca4H4O20Zn4?
The lowest-energy reported polymorph of As4Ca4H4O20Zn4 is orthorhombic symmetry, space group P212121 (No. 19).
What is the density of As4Ca4H4O20Zn4?
The computed density of the ground-state structure of As4Ca4H4O20Zn4 is 4.32 g/cm³.
How many polymorphs of As4Ca4H4O20Zn4 are known?
6 structures of As4Ca4H4O20Zn4 are reported across 4 databases, spanning 2 distinct space groups.
What elements does As4Ca4H4O20Zn4 contain?
As4Ca4H4O20Zn4 contains As, Ca, H, O, and Zn (5 elements).
Where does the data for As4Ca4H4O20Zn4 come from?
As4Ca4H4O20Zn4 data is cross-referenced from materials_project, cod, nomad, aflow.
Comparison

How It Compares

As a thermodynamically stable semiconducting compound, this material represents a distinct entry in the landscape of complex quaternary and quinary oxides. While it does not share its specific structural class with other common materials in this database, its stability profile positions it as a reliable reference point for future studies into similar multi-element frameworks.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
  • nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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