As2Ga1In1
As2Ga1In1 is a semiconducting ternary arsenide compound that is theoretically stable enough to be a candidate for laboratory synthesis.
About As2Ga1In1
As2Ga1In1 is a ternary arsenide compound characterized by its semiconducting electronic nature. As a material positioned near the thermodynamic hull, it is considered a promising candidate for experimental synthesis and further structural characterization.
Its significance lies in the potential for tuning electronic properties through the combination of gallium and indium within an arsenide framework. This material is of interest to researchers investigating new semiconductor architectures for next-generation optoelectronic devices.
Key Properties
Cross-validated computational properties for As2Ga1In1, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As2Ga1In1, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-4m2 (No. 115) | tetragonal | 1.28 | 0.0160 | -16.261 | 5.22 |
| R3m (No. 160) | trigonal | 0.00 | 0.0321 | -16.244 | 5.20 |
| F-43m (No. 216) | — | — | — | — | — |
| Cm (No. 8) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| P4mm (No. 99) | — | — | — | — | — |
| Cmm2 (No. 35) | — | — | — | — | — |
| I4/mmm (No. 139) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Pm (No. 6) | — | — | — | — | — |
| P4/mmm (No. 123) | — | — | — | — | — |
| Immm (No. 71) | — | — | — | — | — |
Applications
Where As2Ga1In1 is used.
Frequently Asked Questions
Common questions about As2Ga1In1, answered from cross-validated data.
What is As2Ga1In1?
As2Ga1In1 is a semiconducting ternary arsenide compound that is theoretically stable enough to be a candidate for laboratory synthesis.
What is As2Ga1In1 used for?
What is the band gap of As2Ga1In1?
Is As2Ga1In1 a metal, semiconductor, or insulator?
Is As2Ga1In1 thermodynamically stable?
What is the crystal structure of As2Ga1In1?
What is the density of As2Ga1In1?
How many polymorphs of As2Ga1In1 are known?
What elements does As2Ga1In1 contain?
Where does the data for As2Ga1In1 come from?
How It Compares
As a ternary arsenide, this compound serves as a unique structural bridge between binary III-V semiconductors, offering a distinct stoichiometry that differentiates it from more common, widely studied binary arsenides.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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